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Bai, Gang
- Bai, G. and Nicolet, M.-A. (1992) Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100); Journal of Applied Physics; Vol. 71; No. 9; 4227-4229; 10.1063/1.350802
- Bai, G. and Nicolet, M.-A. (1992) Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures; Journal of Applied Physics; Vol. 71; No. 2; 670-675; 10.1063/1.351325
- Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature; Journal of Applied Physics; Vol. 70; No. 7; 3551-3555; 10.1063/1.349251
- Bai, G. and Nicolet, M.-A. (1991) Defects production and annealing in self-implanted Si; Journal of Applied Physics; Vol. 70; No. 2; 649-655; 10.1063/1.349668
- Bai, G. and Nicolet, M.-A., el al. (1991) Elastic and thermal properties of mesotaxial CoSi2 layers on Si; Journal of Applied Physics; Vol. 69; No. 9; 6451-6455
- Mahan, John E. and Geib, Kent M., el al. (1991) Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon; Journal of Vacuum Science and Technology B; Vol. 9; No. 1; 64-68; 10.1116/1.585791
- Bai, G. and Nicolet, M-A., el al. (1990) Radiation damage in ReSi2 by a MeV 4He beam; Applied Physics Letters; Vol. 57; No. 16; 1657-1659; 10.1063/1.104134
- Bai, G. and Nicolet, M.-A., el al. (1990) Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100); Physical Review B; Vol. 41; No. 13; 8603-8607; 10.1103/PhysRevB.41.8603
- Zhou, P. and Jiang, H. X., el al. (1989) Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness; Physical Review B; Vol. 40; No. 17; 11862-11867; 10.1103/PhysRevB.40.11862
- Tandon, J. L. and Leybovich, I. S., el al. (1989) Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs; Journal of Vacuum Science and Technology B; Vol. 7; No. 5; 1090-1095; 10.1116/1.584556
- Mii, Y. J. and Karunasini, R. P> G., el al. (1989) Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 341-344; 10.1116/1.584746
- Tandon, J. L. and Madok, J. H., el al. (1989) Sequential nature of damage annealing and activation in implanted GaAs; Applied Physics Letters; Vol. 54; No. 5; 448-450; 10.1063/1.100948
- Bai, G. and Tsai, C.-J., el al. (1987) Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction
- Bai, G. and Jamieson, D. N., el al. (1987) Defects Annealing of Si^+ Implanted GaAs at RT and 100°C; ISBN 9780931837609; Materials Modification and Growth Using Ion Beams; 67-72; 10.1557/PROC-93-67
