[
    {
        "id": "authors:h2hbk-2bm48",
        "collection": "authors",
        "collection_id": "h2hbk-2bm48",
        "cite_using_url": "https://authors.library.caltech.edu/records/h2hbk-2bm48",
        "type": "conference_item",
        "title": "Experimental Characterization of Temperature-Dependent Microwave Noise of Discrete HEMTs: Drain Noise and Real-Space Transfer",
        "author": [
            {
                "family_name": "Gabritchidze",
                "given_name": "Bekari",
                "orcid": "0000-0001-6392-0523",
                "clpid": "Gabritchidze-Bekari"
            },
            {
                "family_name": "Cleary",
                "given_name": "Kieran",
                "orcid": "0000-0002-8214-8265",
                "clpid": "Cleary-K-A"
            },
            {
                "family_name": "Kooi",
                "given_name": "Jacob",
                "orcid": "0000-0002-6610-0384",
                "clpid": "Kooi-Jacob"
            },
            {
                "family_name": "Esho",
                "given_name": "Iretomiwa",
                "orcid": "0000-0002-3746-6571",
                "clpid": "Esho-Iretomiwa"
            },
            {
                "family_name": "Readhead",
                "given_name": "Anthony C.",
                "orcid": "0000-0001-9152-961X",
                "clpid": "Readhead-A-C-S"
            },
            {
                "family_name": "Minnich",
                "given_name": "Austin J.",
                "orcid": "0000-0002-9671-9540",
                "clpid": "Minnich-A-J"
            }
        ],
        "abstract": "<p>We report wafer characterization of the S-parameters and microwave noise temperature of discrete GaAs and GaN HEMTs over a temperature range of 20 - 300 K. The measured noise temperature (T50) exhibits a dependence on physical temperature that is inconsistent with a constant drain temperature, with Td for the GaAs and GaN devices changing from ~ 2000 K and ~2800 K at room temperature to ~ 700 K and ~ 1800 K at cryogenic temperatures, respectively. The observed temperature dependence is qualitatively consistent with that predicted from a theory of drain noise based on real-space transfer of electrons from the channel to the barrier.</p>",
        "doi": "10.1109/ims37962.2022.9865505",
        "isbn": "978-1-6654-9613-1",
        "publisher": "IEEE",
        "publication": "2022 IEEE/MTT-S International Microwave Symposium - IMS 2022",
        "publication_date": "2022-06-19",
        "pages": "615-618"
    }
]