McCaldin, James Oeland

Article from CaltechAUTHORS

• Bandić, Z. Z. and Piquette, E. C., el al. (1998) Solid phase recrystallization of ZnS thin films on sapphire; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; 10.1063/1.121483
• Piquette, E. C. and Bandić, Z. Z., el al. (1997) Growth and characterization of light emitting ZnS/GaN heterostructures; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1148-1152; 10.1116/1.589430
• Wang, M. W. and McCaldin, J. O., el al. (1995) Schottky-based band lineups for refractory semiconductors; Applied Physics Letters; Vol. 66; No. 15; 1974-1976; 10.1063/1.113295
• Wang, M. W. and Swenberg, J. F., el al. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; 10.1063/1.111239
• Wang, M. W. and Phillips, M. C., el al. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; 10.1063/1.352761
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• McCaldin, J. O. and McGill, T. C. (1992) Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems"; Applied Physics Letters; Vol. 61; No. 18; 2243; 10.1063/1.108255
• Phillips, M. C. and Wang, M. W., el al. (1992) Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors; Applied Physics Letters; Vol. 61; No. 16; 1962-1964; 10.1063/1.108353
• Liu, Y. X. and Wang, M. W., el al. (1992) Schottky barrier induced injecting contact on wide band gap semiconductors; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 2072-2076; 10.1116/1.586320
• Yu, E. T. and Phillips, M. C., el al. (1991) Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; 10.1116/1.585726
• Yu, E. T. and Croke, E. T., el al. (1990) Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100); Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; 10.1116/1.584941
• McCaldin, J. O. (1990) Current approaches to pn junctions in wider band gap II–VI semiconductors; Journal of Vacuum Science and Technology A; Vol. 8; No. 2; 1188-1193; 10.1116/1.576943
• Rajakarunanayake, Y. and Cole, B. H., el al. (1989) Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe; Applied Physics Letters; Vol. 55; No. 12; 1217-1219; 10.1063/1.101659
• Chow, D. H. and McCaldin, J. O., el al. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; 10.1063/1.98949
• McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; 10.1116/1.584221
• Chow, D. H. and McCaldin, J. O., el al. (1988) Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures; Journal of Vacuum Science and Technology A; Vol. 6; No. 4; 2614-2618; 10.1116/1.575517
• Johnson, M. B. and Zur, A., el al. (1985) Summary Abstract: Band offsets at HgTe CdTe interfaces; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1260; 10.1116/1.583008
• Kuech, T. F. and McCaldin, J. O. (1982) HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure; Journal of Applied Physics; Vol. 53; No. 4; 3121-3128; 10.1063/1.331008
• McCaldin, J. O. and Kuech, T. F. (1981) Stability and pinning points in substrate-confined liquids; Journal of Applied Physics; Vol. 52; No. 2; 803-807; 10.1063/1.328766
• Kuech, T. F. and McGaldin, J. O. (1980) Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 891-893; 10.1116/1.570611
• McCaldin, J. O. and McGill­, T. C. (1980) The metal-semiconductor interface; Annual Review of Materials Science; Vol. 10; 65-83; 10.1146/annurev.ms.10.080180.000433
• Kuech, T. F. and McCaldin, J. O. (1980) Confining substrate for micron-thick liquid films; Applied Physics Letters; Vol. 37; No. 1; 44-46
• Scranton, R. A. and McCaldin, J. O. (1978) Dissolution of amorphous silicon into solid aluminum; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1358-1361; 10.1116/1.569765
• Scranton, R. A. and Best, J. S., el al. (1977) Highly electronegative contacts to compound semiconductors; Journal of Vacuum Science and Technology; Vol. 14; No. 4; 930-934; 10.1116/1.569391
• Best, J. S. and McCaldin, J. O., el al. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices; Applied Physics Letters; Vol. 29; No. 7; 433-434; 10.1063/1.89109
• Scranton, R. A. and Mooney, J. B., el al. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride; Applied Physics Letters; Vol. 29; No. 1; 47-48; 10.1063/1.88868
• McCaldin, J. O. and McGill, T. C., el al. (1976) Schottky barriers on compound semiconductors: The role of the anion; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; 10.1116/1.568993
• Boatright, R. L. and McCaldin, J. O. (1976) Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 938-939; 10.1116/1.569025
• Boatright, R. L. and McCaldin, J. O. (1976) Solid-state growth of Si to produce planar surfaces; Journal of Applied Physics; Vol. 47; No. 6; 2260-2262; 10.1063/1.323015
• McCaldin, J. O. and McGill, T. C., el al. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity; Physical Review Letters; Vol. 36; No. 1; 56-58; 10.1103/PhysRevLett.36.56
• Best, John S. and McCaldin, J. O. (1975) Interfacial impurities and the reaction between Si and evaporated Al; Journal of Applied Physics; Vol. 46; No. 9; 4071-4072; 10.1063/1.322113
• McCaldin, J. O. (1974) Atom movements occurring at solid metal-semiconductor interfaces; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 990-995; 10.1116/1.1318718
• Ottaviani, G. and Sigurd, D., el al. (1974) Crystallization of Ge and Si in metal films. I; Journal of Applied Physics; Vol. 45; No. 4; 1730-1739; 10.1063/1.1663483
• Ottaviani, G. and Sigurd, D., el al. (1973) Crystal Growth of Silicon and Germanium in Metal Films; Science; Vol. 180; No. 4089; 948-949; 10.1126/science.180.4089.948
• Sankur, H. and McCaldin, J. O., el al. (1973) Solid-phase epitaxial growth of Si mesas from Al metallization; Applied Physics Letters; Vol. 22; No. 2; 64-66; 10.1063/1.1654558
• Caywood, J. M. and Fern, A. M., el al. (1972) Solid-Phase Growth of Ge from Evaporated Al Layer; Applied Physics Letters; Vol. 20; No. 8; 326-327; 10.1063/1.1654170
• McCaldin, J. O. and Sankur, H. (1972) Precipitation of Si from the Al metallization of integrated circuits; Applied Physics Letters; Vol. 20; No. 4; 171-172; 10.1063/1.1654096
• McCaldin, J. O. and Sankur, H. (1971) Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits; Applied Physics Letters; Vol. 19; No. 12; 524-527; 10.1063/1.1653799
• McCaldin, J. O. and Mayer, J. W. (1970) Donor behavior in indium-alloyed silicon; Applied Physics Letters; Vol. 17; No. 9; 365-366; 10.1063/1.1653436
• Fong, Francis K. and Fenn, John B., Jr., el al. (1970) Reactions in Crystalline Lattices: Chemistry of Lower Valence States of Lanthanides; Journal of Chemical Physics; Vol. 53; No. 4; 1559-1565; 10.1063/1.1674213
• McCaldin, J. O. (1965) Solubility Interactions in Compensated, Heavily Doped Germanium; Journal of Applied Physics; Vol. 36; No. 1; 211-213; 10.1063/1.1713878
• McCaldin, J. O. and Widmer, A. E. (1964) Differing results obtained in the doping of semiconductors by energetic ions; Journal of Applied Physics; Vol. 35; No. 6; 1985-1986; 10.1063/1.1713787
• McCaldin, J. O. (1963) Solubility of Zinc in Gallium Arsenidem; Journal of Applied Physics; Vol. 34; No. 6; 1748-1753; 10.1063/1.1702672
• McCaldin, J. O. and Wittry, D. B. (1961) Germanium Saturated with Gallium Antimonide; Journal of Applied Physics; Vol. 32; No. 1; 65-69; 10.1063/1.1735962
• McCaldin, J. O. and Harada, Roy (1960) Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium; Journal of Applied Physics; Vol. 31; No. 11; 2065-2066; 10.1063/1.1735501
• McCaldin, J. O. (1960) Interaction between Arsenic and Aluminum in Germanium; Journal of Applied Physics; Vol. 31; No. 1; 89-94; 10.1063/1.1735425