@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl98,
    title = "Solid phase recrystallization of ZnS thin films on sapphire",
    journal = "Applied Physics Letters",
    year = "1998",
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    id = "record",
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    doi = "10.1063/1.121483",
    volume = "72"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712,
    title = "Growth and characterization of light emitting ZnS/GaN heterostructures",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1997",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589430",
    volume = "15"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl95,
    title = "Schottky-based band lineups for refractory semiconductors",
    journal = "Applied Physics Letters",
    year = "1995",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl95",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.113295",
    volume = "66"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl94,
    title = "X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds",
    journal = "Applied Physics Letters",
    year = "1994",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl94",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.111239",
    volume = "64"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808,
    title = "n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design",
    journal = "Journal of Applied Physics",
    year = "1993",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.352761",
    volume = "73"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92,
    title = "Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system",
    journal = "Physical Review B",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.46.13379",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCapl92,
    title = {Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems"},
    journal = "Applied Physics Letters",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MCCapl92",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.108255",
    volume = "61"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92,
    title = "Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors",
    journal = "Applied Physics Letters",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92",
    id = "record",
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    doi = "10.1063/1.108353",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92,
    title = "Schottky barrier induced injecting contact on wide band gap semiconductors",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1992",
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    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.586320",
    volume = "10"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91,
    title = "Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585726",
    volume = "9"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90,
    title = "Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584941",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90,
    title = "Current approaches to pn junctions in wider band gap II–VI semiconductors",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.576943",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89,
    title = "Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe",
    journal = "Applied Physics Letters",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.101659",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHOapl88,
    title = "Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions",
    journal = "Applied Physics Letters",
    year = "1988",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHOapl88",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.98949",
    volume = "51"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911,
    title = "Electrical studies of single-barrier Hg\_(1-x)Cd\_x Te heterostructures",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1988",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.575517",
    volume = "6"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88,
    title = "Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1988",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584221",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:JOHjvstb85,
    title = "Summary Abstract: Band offsets at HgTe CdTe interfaces",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:JOHjvstb85",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.583008",
    volume = "3"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KUEjap82,
    title = "HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure",
    journal = "Journal of Applied Physics",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KUEjap82",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.331008",
    volume = "53"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjap81,
    title = "Stability and pinning points in substrate-confined liquids",
    journal = "Journal of Applied Physics",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MCCjap81",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.328766",
    volume = "52"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392,
    title = "Compositional dependence of Schottky barrier heights for Au on chemically etched In\_(x)Ga\_(1-x)P surfaces",
    journal = "Journal of Vacuum Science and Technology",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.570611",
    volume = "17"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCarms80,
    title = "The metal-semiconductor interface",
    journal = "Annual Review of Materials Science",
    year = "1980",
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    id = "record",
    issn = "0084-6600",
    doi = "10.1146/annurev.ms.10.080180.000433",
    volume = "10"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KUEapl80,
    title = "Confining substrate for micron-thick liquid films",
    journal = "Applied Physics Letters",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KUEapl80",
    id = "record",
    issn = "0003-6951",
    volume = "37"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120813-125643614,
    title = "Dissolution of amorphous silicon into solid aluminum",
    journal = "Journal of Vacuum Science and Technology",
    year = "1978",
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    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569765",
    volume = "15"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120809-111328673,
    title = "Highly electronegative contacts to compound semiconductors",
    journal = "Journal of Vacuum Science and Technology",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120809-111328673",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569391",
    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BESapl76,
    title = "HgSe, a highly electronegative stable metallic contact for semiconductor devices",
    journal = "Applied Physics Letters",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BESapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.89109",
    volume = "29"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604,
    title = "Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride",
    journal = "Applied Physics Letters",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604",
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    issn = "0003-6951",
    doi = "10.1063/1.88868",
    volume = "29"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst76,
    title = "Schottky barriers on compound semiconductors: The role of the anion",
    journal = "Journal of Vacuum Science and Technology",
    year = "1976",
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    doi = "10.1116/1.568993",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120725-094120934,
    title = "Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth",
    journal = "Journal of Vacuum Science and Technology",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120725-094120934",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BOAjap76,
    title = "Solid-state growth of Si to produce planar surfaces",
    journal = "Journal of Applied Physics",
    year = "1976",
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    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.323015",
    volume = "47"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76,
    title = "Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity",
    journal = "Physical Review Letters",
    year = "1976",
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    id = "record",
    issn = "0031-9007",
    doi = "10.1103/PhysRevLett.36.56",
    volume = "36"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BESjap75,
    title = "Interfacial impurities and the reaction between Si and evaporated Al",
    journal = "Journal of Applied Physics",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BESjap75",
    id = "record",
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    doi = "10.1063/1.322113",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst74,
    title = "Atom movements occurring at solid metal-semiconductor interfaces",
    journal = "Journal of Vacuum Science and Technology",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74,
    title = "Crystallization of Ge and Si in metal films. I",
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    doi = "10.1063/1.1663483",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307,
    title = "Crystal Growth of Silicon and Germanium in Metal Films",
    journal = "Science",
    year = "1973",
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    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.180.4089.948",
    volume = "180"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SANapl73,
    title = "Solid-phase epitaxial growth of Si mesas from Al metallization",
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    id = "record",
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    doi = "10.1063/1.1654558",
    volume = "22"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CAYapl72,
    title = "Solid-Phase Growth of Ge from Evaporated Al Layer",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.1654170",
    volume = "20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCapl72,
    title = "Precipitation of Si from the Al metallization of integrated circuits",
    journal = "Applied Physics Letters",
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    title = "Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits",
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    doi = "10.1063/1.1653799",
    volume = "19"
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    title = "Donor behavior in indium-alloyed silicon",
    journal = "Applied Physics Letters",
    year = "1970",
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    doi = "10.1063/1.1653436",
    volume = "17"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:FONjcp70,
    title = "Reactions in Crystalline Lattices: Chemistry of Lower Valence States of Lanthanides",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjap65,
    title = "Solubility Interactions in Compensated, Heavily Doped Germanium",
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    title = "Differing results obtained in the doping of semiconductors by energetic ions",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCjap63,
    title = "Solubility of Zinc in Gallium Arsenidem",
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    title = "Germanium Saturated with Gallium Antimonide",
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    volume = "32"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120920-094136745,
    title = "Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium",
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    title = "Interaction between Arsenic and Aluminum in Germanium",
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