McCaldin, James Oeland
- Beach, Robert Andrew (2001) Column III Nitride Growth, Characterization and Devices; 10.7907/C61D-BC22
- Liu, Yixin (1995) Quantum tunneling, field induced injecting contact, and excitons; 10.7907/JKFM-1G06
- Croke, Edward Timothy, III (1991) Growth and Characterization of Si-Based Electronic Materials for Novel Device Applications; 10.7907/yc74-1m24
- Rajakarunanayake, Yasantha Nirmal (1991) Optical properties of Si-Ge superlattices and wide band gap II-VI superlattices; 10.7907/b43v-6930
- Yu, Edward Tsu-Wei (1991) Physics and applications of semiconductor heterostructures : I. Measurement of band offsets in semiconductor heterojunctions. II. Theoretical and experimental studies of tunneling in semiconductor heterostructure devices; 10.7907/AXNV-8575
- Johnson, Matthew Bruce (1989) Ultrafast Time-Resolved Photoluminescence Studies of GaAs; 10.7907/9WE7-AP87
- Chow, David Hsingkuo (1989) Growth, Characterization, and Simulation of Novel Semiconductor Tunnel Structures; 10.7907/96gc-kc14
- Wu, Yu-shu George (1988) Electronic Properties of II-VI Superlattices and III-V Tunnel Structures; 10.7907/7sag-9t91
- Woodward, Ted Kirk (1988) Experimental Studies of Heterostructure Devices: Resonant Tunneling Transistors and GaAs/AlAs/GaAs Capacitors; 10.7907/cwz8-my71
- So, Frank Cheung Tao (1988) Diffusion Barriers for VLSI Applications; 10.7907/7ytp-0932
- Hauenstein, Robert Joseph (1987) Investigations of Single-Crystal Silicide/Silicon Structures; 10.7907/8hdm-m814
- Hetzler, Steven Robert (1986) Infrared Optical Studies of HgTe-CdTe Superlattices and GaAs; 10.7907/5ptm-z449
- Lien, Chuen-Der (1985) Thin Film Silicide Formation by Thermal Annealing: Study of Kinetics, Moving Species, Impurity Effect, and Electrical Properties; 10.7907/t5r5-5267
- Collins, Reuben Theodore (1985) Electronic Properties of Heterostructures and Defects in Compound Semiconductors; 10.7907/pg8h-k549
- Mehra, Madhav (1985) The Atomic Structure of Some Metallic Glasses and the Influence of the Preparation Technique on the Amorphous State; 10.7907/6twq-9080
- Bartur, Meir (1984) Utilization of Silicides for VLSI-Contacts with Aluminum and Thermal Oxidation; 10.7907/V36Y-BW59
- Zur, Amikam (1984) Theoretical Investigations of Solid Interfaces: 1. The Position of the Fermi Level at a Metal-Semiconductor Interface. 2. Geometric Lattice Match and Its Application to Heteroepitaxy. 3. Ab-Initio Calculation of the Elastic Properties of Silicon, Using Small Clusters; 10.7907/w8vp-2g07
- Blauvelt, Henry A. (1983) New Structures for AlGaAs Lasers and Avalanche Photodetectors; 10.7907/DJMZ-S785
- Harder, Christoph S. (1983) Bistability, High Speed Modulation, Noise and Pulsations in GaAlAs Semiconductor Lasers; 10.7907/jxwz-e844
- Batchelder, John Samuel (1982) The Luminescent Solar Concentrator; 10.7907/W5W7-9660
- Hunter, Andrew Thompson (1982) Low Temperature Photoluminescence Studies of Shallow Electronic States in Semiconductors; 10.7907/m34b-s854
- Feenstra, Randall Meindert (1982) Electronic and Vibrational States of Point Defects in Semiconductors; 10.7907/p5ph-6811
- Meins, Charles Kenneth, Jr. (1982) Investigations into Electronic Stopping Regime Sputtering of Uranium Tetrafluoride; 10.7907/vsb2-2g34
- Kuech, Thomas Francis (1981) Investigations of Schottky Barrier Structures in Compound Semiconductors: I. HgTe on CdTe: a Lattice Matched Schottky Barrier. II. Au-Cd Barriers to CdTe. III. AAu Barriers on InₓGa₁₋ₓP; 10.7907/8hcw-7421