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    title = "Description of bulk inversion asymmetry in the effective-bond-orbital model",
    journal = "Physical Review B",
    year = "2003",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.68.235319",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:STRIjap03,
    title = "Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes",
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    id = "record",
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    doi = "10.1063/1.1611267",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PREjvstb03,
    title = "Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection",
    journal = "Journal of Vacuum Science and Technology B",
    year = "2003",
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    doi = "10.1116/1.1588648",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CARnanotech03,
    title = "An efficient multiband envelope function approximation method for spintronics",
    journal = "Nanotechnology",
    year = "2003",
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    id = "record",
    issn = "0957-4484",
    doi = "10.1088/0957-4484/14/2/340",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20191112-111435523,
    title = "Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures",
    journal = "Journal of Computational Electronics",
    year = "2002",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20191112-111435523",
    id = "record",
    issn = "1569-8025",
    doi = "10.1023/a:1020796618175",
    volume = "1"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20200103-162108300,
    title = "Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:OLDjvsta02,
    title = "Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PREjvstb01,
    title = "Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy",
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    doi = "10.1116/1.1387464",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEjap00,
    title = "Tunnel switch diode based on AlSb/GaSb heterojunctions",
    journal = "Journal of Applied Physics",
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    id = "record",
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    doi = "10.1063/1.1317236",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20111130-095036875,
    title = "Nickel layers on indium arsenide",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
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    doi = "10.1116/1.1306283",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ALOjap00,
    title = "Strain in wet thermally oxidized square and circular mesas",
    journal = "Journal of Applied Physics",
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    id = "record",
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    doi = "10.1063/1.373108",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HILapl99,
    title = "Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment",
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    doi = "10.1063/1.125525",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEjap99,
    title = "Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers",
    journal = "Journal of Applied Physics",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:JONapl99,
    title = "Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.124682",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99,
    title = "Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain",
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    doi = "10.1116/1.590819",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BEAjvstb99,
    title = "Piezoelectric fields in nitride devices",
    journal = "Journal of Vacuum Science and Technology B",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99,
    title = "Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.124148",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142,
    title = "Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire",
    journal = "Journal of Vacuum Science and Technology B",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl99,
    title = "High voltage (450 V) GaN Schottky rectifiers",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.123520",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BEAmrsijnsr99,
    title = "XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces",
    journal = "MRS Internet Journal of Nitride Semiconductor Research",
    year = "1999",
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    id = "record",
    issn = "1092-5783",
    volume = "4"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99,
    title = "Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE",
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    title = "Effect of cylindrical geometry on the wet thermal oxidation of AlAs",
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    doi = "10.1063/1.368987",
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    title = "Correlation between the surface defect distribution and minority carrier transport properties in GaN",
    journal = "Applied Physics Letters",
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    title = "Electron diffusion length and lifetime in p-type GaN",
    journal = "Applied Physics Letters",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:JONjvstb98,
    title = "Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy",
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    title = "Experimental and theoretical study of ultra-thin oxides",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEjvstb98,
    title = "Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb98,
    title = "Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures",
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    title = "Solid phase recrystallization of ZnS thin films on sapphire",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINvd98a,
    title = "Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes",
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    id = "record",
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    title = "Interface Roughness Effects in Ultra-Thin Tunneling Oxides",
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    title = "Growth and characterization of light emitting ZnS/GaN heterostructures",
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    title = "Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy",
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    title = "Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress",
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    title = "Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy",
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    doi = "10.1063/1.119274",
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    title = "Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors",
    journal = "Applied Physics Letters",
    year = "1992",
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    doi = "10.1063/1.108353",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92,
    title = "Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1992",
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    doi = "10.1116/1.586170",
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    title = "Schottky barrier induced injecting contact on wide band gap semiconductors",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1992",
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    doi = "10.1116/1.586320",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120316-101012482,
    title = "Reflection high-energy electron diffraction studies of the growth of lnAs/Ga\_(1-x)In\_xSb strained-layer superlattices",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1992",
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    doi = "10.1116/1.586240",
    volume = "10"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINprb92,
    title = "Multiband treatment of quantum transport in interband tunnel devices",
    journal = "Physical Review B",
    year = "1992",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.45.3583",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHOsst91.829,
    title = "Type II superlattices for infrared detectors and devices",
    journal = "Semiconductor Science and Technology",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHOsst91.829",
    id = "record",
    issn = "0268-1242",
    doi = "10.1088/0268-1242/6/12C/010",
    volume = "6"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91,
    title = "Band structure effects in interband tunnel devices",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1991",
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    doi = "10.1116/1.585711",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120418-154233164,
    title = "Observation of a (2X8) surface reconstruction on Si\_(1-x)Ge\_x alloys grown on (100) Si by molecular beam epitaxy",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1991",
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    doi = "10.1116/1.585737",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91,
    title = "Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy",
    journal = "Journal of Vacuum Science and Technology B",
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    doi = "10.1116/1.585726",
    volume = "9"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:COLapl90,
    title = "Experimental observation of negative differential resistance from an InAs/GaSb interface",
    journal = "Applied Physics Letters",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:COLapl90",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.103591",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SODjap90,
    title = "Two-band modeling of narrow band gap and interband tunneling devices",
    journal = "Journal of Applied Physics",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SODjap90",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.346688",
    volume = "68"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb90,
    title = "Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1990",
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    doi = "10.1116/1.584945",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90,
    title = "Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90",
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    title = "Modeling of novel heterojunction tunnel structures",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1990",
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    id = "record",
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    doi = "10.1116/1.584971",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHOjvstb90,
    title = "lnAs/Ga\_(1-x) ln\_xSb strained-layer superlattices grown by molecular-beam epitaxy",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1990",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89b,
    title = "Effects of barrier phonons on the tunneling current in a double-barrier structure",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.40.9969",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SODjap89,
    title = "Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures",
    journal = "Journal of Applied Physics",
    year = "1989",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b,
    title = "Si-Si1−xGex n-type resonant tunnel structures",
    journal = "Applied Physics Letters",
    year = "1989",
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    doi = "10.1063/1.102238",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SODapl89b,
    title = "Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures",
    journal = "Applied Physics Letters",
    year = "1989",
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    doi = "10.1063/1.101595",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89,
    title = "Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe",
    journal = "Applied Physics Letters",
    year = "1989",
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    doi = "10.1063/1.101659",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SODapl89a,
    title = "New negative differential resistance device based on resonant interband tunneling",
    journal = "Applied Physics Letters",
    year = "1989",
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    doi = "10.1063/1.101715",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:JACapl89b,
    title = "Raman scattering determination of strain in CdTe/ZnTe superlattices",
    journal = "Applied Physics Letters",
    year = "1989",
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    doi = "10.1063/1.101781",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89,
    title = "Hole tunneling times in GaAs/AlAs double-barrier structures",
    journal = "Applied Physics Letters",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJprb89,
    title = "Band structure and optical properties of Si-Si1-xGex superlattices",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.40.3051",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb89,
    title = "Strain effects and optical properties of Si1–xGex/Si superlattices",
    journal = "Journal of Vacuum Science and Technology B",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:JOHjap89,
    title = "Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb89,
    title = "X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures",
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    title = "Structural perfection in poorly lattice matched heterostructures",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb89,
    title = "Strain relaxation kinetics in Si1–xGex/Si heterostructures",
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    title = "Carrier lifetimes in ion-damaged GaAs",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89a,
    title = "k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field",
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    doi = "10.1103/PhysRevB.39.6060",
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    title = "Commutativity of the GaAs/AlAs (100) band offset",
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    title = "Electron tunneling time measured by photoluminescence excitation correlation spectroscopy",
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    title = "Finite-size effects in two-dimensional continuum percolation",
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    doi = "10.1103/PhysRevB.39.369",
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    title = "Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions",
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    doi = "10.1063/1.98949",
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    title = "Electrical studies of single-barrier Hg\_(1-x)Cd\_x Te heterostructures",
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    title = "Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k·p theory",
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    title = "Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120607-134521339,
    title = "Accommodation of lattice mismatch in Ge\_(x)Si\_(1−x)/Si superlattices",
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    title = "Band structure of ZnSe-ZnTe superlattices",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.37.10212",
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    title = "Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field",
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    title = "Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces",
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    title = "Structure of CdTe/ZnTe superlattices",
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    title = "Infrared absorption measurement and analysis of HgTe–CdTe superlattices",
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    title = "Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition",
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    title = "Superlattices: Progress and prospects",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WOOjvstb86,
    title = "Electrical behavior of GaAs–AlAs heterostructures",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HAUjvsta86,
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    title = "Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si",
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    title = "Photoresponse of GaAs/AlAs heterostructures under external bias",
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    title = "Theoretical investigation of the effect of strain on phase separation in epitaxial layers",
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    title = "Electronic properties of deep levels in p‐type CdTe",
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    title = "Summary Abstract: HgTe–CdTe superlattices",
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    title = "Tunneling and propagating transport in GaAs-Ga\_(1-x)Al\_xAs-GaAs(100) double heterojunctions",
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    title = "Prospects for the future of narrow bandgap materials",
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    title = "Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface",
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    title = "Luminescence studies of HgCdTe alloys",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505,
    title = "Surface vacancies in II-VI and III-V zinc blende
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    title = "Condensation of Injected Electrons and Holes in Germanium",
    journal = "Physical Review Letters",
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    id = "record",
    issn = "0031-9007",
    doi = "10.1103/PhysRevLett.31.593",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170809-154939939,
    title = "Overlapping-gate buried-channel charge-coupled devices",
    journal = "Electronics Letters",
    year = "1973",
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    id = "record",
    issn = "0013-5194",
    doi = "10.1049/el:19730293",
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    title = "Charge transfer in overlapping gate charge-coupled devices",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20150113-162610060,
    title = "The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices",
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    title = "Push clocks: a new approach to charge-coupled devices clocking",
    journal = "Applied Physics Letters",
    year = "1973",
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    id = "record",
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    doi = "10.1063/1.1654600",
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    title = "Evaluation of the Third Moment of the Imaginary Part of the Dielectric Constant",
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    id = "record",
    issn = "0556-2805",
    doi = "10.1103/PhysRevB.6.2493",
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    title = "Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors",
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    id = "record",
    issn = "0556-2805",
    doi = "10.1103/PhysRevB.5.1517",
    volume = "5"
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    title = "Direct interelectrode tunneling in GaSe",
    journal = "Physical Review B",
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    id = "record",
    issn = "0556-2805",
    doi = "10.1103/PhysRevB.3.3368",
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    title = "Critical analysis of the 'generalized coherent wave approximation'",
    journal = "Journal of Physics C: Solid State Physics",
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    title = "Tunneling Currents and the E-k Relation",
    journal = "Physical Review Letters",
    year = "1970",
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    id = "record",
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    doi = "10.1103/PhysRevLett.25.756",
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    title = "Energy gaps in amorphous covalent semiconductors",
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    title = "Contact-limited currents in metal-insulator-metal structures",
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    id = "record",
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    doi = "10.1063/1.1659514",
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    title = "Optical Reflection Studies of Damage in Ion Implanted Silicon",
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    id = "record",
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    doi = "10.1103/PhysRevB.11.5208",
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    title = "Diffraction of Gaussian Laser Beams by a Semi-Infinite Plane",
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    issn = "0030-3941",
    volume = "59"
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    title = "Fundamental transition in the electronic nature of solids",
    journal = "Physical Review Letters",
    year = "1969",
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    id = "record",
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    doi = "10.1103/PhysRevLett.22.1433",
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    title = "Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region",
    journal = "Applied Physics Letters",
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    id = "record",
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    doi = "10.1063/1.1652788",
    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20141217-151846023,
    title = "Electric field dependence of GaAs Schottky barriers",
    journal = "Solid-State Electronics",
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    id = "record",
    issn = "0038-1101",
    doi = "10.1016/0038-1101(68)90079-8",
    volume = "11"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20141216-154636409,
    title = "The Tunneling Time of an Electron",
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    year = "1967",
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    id = "record",
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    doi = "10.1063/1.1709888",
    volume = "38"
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