McGill, Thomas C.
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- Ting, D. Z.-Y. and McGill, T. C. (1998) Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2182-2187; 10.1116/1.590297
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- Ting, D. Z.-Y. and McGill, T. C. (1998) Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes; VLSI Design; Vol. 6; No. 1-4; 363-366; 10.1155/1998/12165
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- Bandić, Z. Z. and McGill, T. C., et el. (1996) Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2948-2951; 10.1116/1.588940
- Ting, D. Z.-Y. and McGill, T. C. (1996) Interface roughness effects on transport in tunnel structures; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2790-2793; 10.1116/1.588834
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- Ting, David Z.-Y. and McGill, Thomas C. (1995) Monte Carlo simulation of light-emitting diode light-extraction characteristics; Optical Engineering; Vol. 34; No. 12; 3545-3553; 10.1117/12.215485
- Pettersson, P. O. and Ahn, C. C., et el. (1995) Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy; Applied Physics Letters; Vol. 67; No. 17; 2530-2532; 10.1063/1.114448
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- Rajakarunanayake, Y. and McGill, T. C. (1990) Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 929-935; 10.1116/1.584945
- Yu, E. T. and Croke, E. T., et el. (1990) Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100); Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; 10.1116/1.584941
- Ting, D. Z.-Y. and Yu, E. T., et el. (1990) Modeling of novel heterojunction tunnel structures; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 810-816; 10.1116/1.584971
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- Wu, G. Y. and McGill, T. C. (1989) Effects of barrier phonons on the tunneling current in a double-barrier structure; Physical Review B; Vol. 40; No. 14; 9969-9972; 10.1103/PhysRevB.40.9969
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- Jackson, M. K. and Miles, R. H., et el. (1989) Raman scattering determination of strain in CdTe/ZnTe superlattices; Applied Physics Letters; Vol. 55; No. 8; 786-788; 10.1063/1.101781
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- Rajakarunanayake, Y. and McGill, T. C. (1989) Band structure and optical properties of Si-Si1-xGex superlattices; Physical Review B; Vol. 40; No. 5; 3051-3059; 10.1103/PhysRevB.40.3051
- Rajakarunanayake, Y. F. and McGill, T. C. (1989) Strain effects and optical properties of Si1–xGex/Si superlattices; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 799-803; 10.1116/1.584603
- Johnson, M. B. and McGill, T. C., et el. (1989) Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy; Journal of Applied Physics; Vol. 66; No. 2; 838-844; 10.1063/1.343506
- Ting, D. Z.-Y. and McGill, T. C. (1989) X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 1031-1034; 10.1116/1.584796
- Miles, R. H. and McGill, T. C. (1989) Structural perfection in poorly lattice matched heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 753-757; 10.1116/1.584639
- Hauenstein, R. J. and Clemens, B. M., et el. (1989) Strain relaxation kinetics in Si1–xGex/Si heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 767-774; 10.1116/1.584598
- Johnson, M. B. and McGill, T. C., et el. (1989) Carrier lifetimes in ion-damaged GaAs; Applied Physics Letters; Vol. 54; No. 24; 2424-2426; 10.1063/1.101096
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- Jackson, M. K. and Johnson, M. B., et el. (1989) Electron tunneling time measured by photoluminescence excitation correlation spectroscopy; Applied Physics Letters; Vol. 54; No. 6; 552-554; 10.1063/1.100928
- Boudville, W. J. and McGill, T. C. (1989) Finite-size effects in two-dimensional continuum percolation; Physical Review B; Vol. 39; No. 1; 369-374; 10.1103/PhysRevB.39.369
- Chow, D. H. and McCaldin, J. O., et el. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; 10.1063/1.98949
- Chow, D. H. and McCaldin, J. O., et el. (1988) Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures; Journal of Vacuum Science and Technology A; Vol. 6; No. 4; 2614-2618; 10.1116/1.575517
- Rajakarunanayake, Y. and Miles, R. H., et el. (1988) Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k·p theory; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1354-1359; 10.1116/1.584220
- McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; 10.1116/1.584221
- Miles, R. H. and Chow, P. P., et el. (1988) Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1382-1385; 10.1116/1.584226
- Rajakarunanayake, Y. and Miles, R. H., et el. (1988) Band structure of ZnSe-ZnTe superlattices; Physical Review B; Vol. 37; No. 17; 10212-10215; 10.1103/PhysRevB.37.10212
- Wu, G. Y. and McGill, T. C., et el. (1987) Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field; Journal of Vacuum Science and Technology B; Vol. 5; No. 5; 3096-3101; 10.1116/1.574224
- Rajakarunanayake, Y. and McGill, T. C. (1987) Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1288-1294; 10.1116/1.583822
- Miles, R. H. and McGill, T. C., et el. (1987) Structure of CdTe/ZnTe superlattices; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1263-1267; 10.1116/1.583816
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- Hauenstein, R. J. and Schlesinger, T. E., et el. (1986) Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si; Journal of Vacuum Science and Technology A; Vol. 4; No. 3; 860-864; 10.1116/1.573796
- Hauenstein, R. J. and Schlesinger, T. E., et el. (1986) Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si; Journal of Vacuum Science and Technology B; Vol. 4; No. 2; 549-550; 10.1116/1.583587
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- Johnson, M. B. and Zur, A., et el. (1985) Summary Abstract: Band offsets at HgTe CdTe interfaces; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1260; 10.1116/1.583008
- Zur, A. and McGill, T. C. (1985) Theoretical investigation of the effect of strain on phase separation in epitaxial layers; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1055-1060; 10.1116/1.583095
- Zur, A. and McGill, T. C., et el. (1985) Transition-metal silicides lattice-matched to silicon; Journal of Applied Physics; Vol. 57; No. 2; 600-603; 10.1063/1.334743
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- Collins, R. T. and Lambe, J., et el. (1984) Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 597-598; 10.1116/1.582845
- Zur, A. and McGill, T. C. (1984) Band offsets, defects, and dipole layers in semiconductor heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 440-444; 10.1116/1.582891
- Collins, R. T. and Lambe, J., et el. (1984) Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers; Journal of Vacuum Science and Technology B; Vol. 2; No. 2; 201-202; 10.1116/1.582779
- Smith, D. L. and McGill, T. C. (1984) HgTe-CdTe Superlattices; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; 10.1051/jphyscol:1984575
- Zur, A. and McGill, T. C. (1984) Lattice match: An application to heteroepitaxy; Journal of Applied Physics; Vol. 55; No. 2; 378-386; 10.1063/1.333084
- Prabhakar, A. and McGill, T. C., et el. (1983) Platinum diffusion into silicon from PtSi; Applied Physics Letters; Vol. 43; No. 12; 1118-1120; 10.1063/1.94247
- Zur, A. and McGill, T. C., et el. (1983) Fermi-level position at a semiconductor-metal interface; Physical Review B; Vol. 28; No. 4; 2060-2067; 10.1103/PhysRevB.28.2060
- Collins, R. T. and McGill, T. C. (1983) Electronic properties of deep levels in p‐type CdTe; Journal of Vacuum Science and Technology A; Vol. 1; No. 3; 1633-1636; 10.1116/1.572245
- Zur, A. and McGill, T. C., et el. (1983) Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; 10.1116/1.582607
- Mailhiot, C. and Smith, D. L., et el. (1983) Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; 10.1116/1.582568
- McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; 10.1116/1.582498
- Mailhiot, C. and McGill, T. C., et el. (1983) Tunneling and propagating transport in GaAs-Ga_(1-x)Al_xAs-GaAs(100) double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 439-444; 10.1116/1.582622
- McGill, T. C. and Collins, D. A. (1983) Prospects for the future of narrow bandgap materials; Semiconductor Science and Technology; Vol. 8; No. 1S; S1-S5; 10.1088/0268-1242/8/1S/001
- Redondo, Antonio and Goddard, William A., III, et el. (1982) Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 328-329; 10.1116/1.571772
- Redondo, Antonio and Goddard, William A., III, et el. (1982) Mott insulator model of the Si(111)–(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 649-654; 10.1116/1.571806
- Mailhiot, C. and Chang, Yia-Chung, et el. (1982) Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 519-523; 10.1116/1.571751
- Hunter, A. T. and McGill, T. C. (1982) Luminescence studies of HgCdTe alloys; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 205-207; 10.1116/1.571716
- Collins, R. T. and Kuech, T. F., et el. (1982) A DLTS study of deep levels in n-type CdTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 191-194; 10.1116/1.571710
- Swarts, C. A. and Daw, M. S., et el. (1982) Bulk vacancies in CdxHg1–xTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 198-200; 10.1116/1.571712
- Hunter, A. T. and McGill, T. C. (1982) Selective excitation luminescence in bulk-grown GaAs; Applied Physics Letters; Vol. 40; No. 2; 169-171; 10.1063/1.93031
- Redondo, A. and Goddard, W. A., III, et el. (1981) Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters; Physical Review B; Vol. 24; No. 10; 6135-6138; 10.1103/PhysRevB.24.6135
- Daw, M. S. and Smith, D. L., et el. (1981) Surface vacancies in II-VI and III-V zinc blende
semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; 10.1116/1.571048
- Swarts, C. A. and Goddard, W. A., III, et el. (1981) Geometry of the abrupt (110) Ge/GaAs interface; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 551-555; 10.1116/1.571124
- Redondo, A. and Goddard, W. A., III, et el. (1981) Oxidation of silicon surfaces; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 498-501; 10.1116/1.571046
- Daw, M. S. and Smith, D. L., et el. (1981) Surface core excitons in III-V semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; 10.1116/1.571069
- Swarts, C. A. and Goddard, W. A., III, et el. (1981) Core to surface excitations on GaAs(110); Journal of Vacuum Science and Technology; Vol. 19; No. 3; 360-366; 10.1116/1.571064
- Swarts, C. A. and Barton, J. J., et el. (1980) Chemisorption of Al and Ga on the GaAs (110) surface; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 869-873; 10.1116/1.570607
- Swarts, C. A. and Goddard, W. A., III, et el. (1980) Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 982-986; 10.1116/1.570652
- Schulman, J. N. and McGill, T. C. (1980) Localization of superlattice electronic states and complex bulk band structures; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1118-1119; 10.1116/1.570625
- McCaldin, J. O. and McGill, T. C. (1980) The metal-semiconductor interface; Annual Review of Materials Science; Vol. 10; 65-83; 10.1146/annurev.ms.10.080180.000433
- Hunter, A. T. and Smith, D. L., et el. (1980) Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe; Applied Physics Letters; Vol. 37; No. 2; 200-203; 10.1063/1.91824
- Barton, John J. and Swarts, Coenraad A., et el. (1980) Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory; Journal of Vacuum Science and Technology; Vol. 17; No. 1; 164-168; 10.1116/1.570462
- Hunter, A. T. and Lyon, S. A., et el. (1979) Transient decay of satellite lines of bound excitons in Si: P; Physical Review B; Vol. 20; No. 6; 2431-2437; 10.1103/PhysRevB.20.2431
- Schulman, J. N. and McGill, T. C. (1979) Ideal CdTe/HgTe superlattices; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1513-1516; 10.1116/1.570237
- Barton, John J. and Goddard, William A., III, et el. (1979) Reconstruction and oxidation of the GaAs(110) surface; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1178-1185; 10.1116/1.570186
- Goddard, William A., III and McGill, T. C. (1979) Study of surfaces and interfaces using quantum chemistry techniques; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1308-1317; 10.1116/1.570148
- Goddard, William A., III and Barton, John J., et el. (1978) Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1274-1286; 10.1116/1.569753
- Schulman, J. N. and McGill, T. C. (1978) Tight‐binding calculation for the AlAs–GaAs (100) interface; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1456-1458; 10.1116/1.569807
- Chen, M. and Lyon, S. A., et el. (1977) Transients of the photoluminescence from EHD in doped and undoped Ge; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; 10.1007/bf02725801
- Best, J. S. and McCaldin, J. O., et el. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices; Applied Physics Letters; Vol. 29; No. 7; 433-434; 10.1063/1.89109
- Mead, C. A. and McGill, T. C. (1976) Schottky barrier heights on p-type diamond and silicon carbide (6h); Physics Letters A; Vol. 58; No. 4; 249-251; 10.1016/0375-9601(76)90088-8
- Scranton, R. A. and Mooney, J. B., et el. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride; Applied Physics Letters; Vol. 29; No. 1; 47-48; 10.1063/1.88868
- McCaldin, J. O. and McGill, T. C., et el. (1976) Schottky barriers on compound semiconductors: The role of the anion; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; 10.1116/1.568993
- McCaldin, J. O. and McGill, T. C., et el. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity; Physical Review Letters; Vol. 36; No. 1; 56-58; 10.1103/PhysRevLett.36.56
- Hammond, R. B. and Smith, D. L., et el. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state; Physical Review Letters; Vol. 35; No. 22; 1535-1538; 10.1103/PhysRevLett.35.1535
- Smith, D. L. and Pan, D. S., et el. (1975) Impact ionization of excitons in Ge and Si; Physical Review B; Vol. 12; No. 10; 4360-4366; 10.1103/PhysRevB.12.4360
- McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors; Physical Review B; Vol. 11; No. 12; 5208-5210; 10.1103/PhysRevB.11.5208
- Lee, T. F. and McGill, T. C. (1975) Variation of impurity–to–band activation energies with impurity density; Journal of Applied Physics; Vol. 46; No. 1; 373-380; 10.1063/1.321346
- Lee, T. F. and Pashley, R. D., et el. (1975) Investigation of tellurium-implanted silicon; Journal of Applied Physics; Vol. 46; No. 1; 381-388; 10.1063/1.321347
- McGill, T. C. (1974) Phenomenology of metal-semiconductor electrical barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 935-942; 10.1116/1.1318709
- Daimon, Yoshiaki and Mohsen, Amr M., et el. (1974) Final stage of the charge-transfer process in charge-coupled devices; IEEE Transactions on Electron Devices; Vol. 21; No. 4; 266-272; 10.1109/T-ED.1974.17908
- Silver, R. N. and McGill, T. C. (1974) Spin-excitation spectra and resistance minima in amorphous ferromagnetic alloys; Physical Review B; Vol. 9; No. 1; 272-280; 10.1103/PhysRevB.9.272
- McGill, T. C. and Mead, C. A. (1974) Electrical interface barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 122-127; 10.1116/1.1318540
- Lee, T. F. and McGill, T. C. (1973) Semiempirical calculation of deep levels: divacancy in Si; Journal of Physics C: Solid State Physics; Vol. 6; No. 23; 3438-3450; 10.1088/0022-3719/6/23/017
- Marrello, V. and Lee, T. F., et el. (1973) Condensation of Injected Electrons and Holes in Germanium; Physical Review Letters; Vol. 31; No. 9; 593-594; 10.1103/PhysRevLett.31.593
- Mohsen, A. M. and Bower, R., et el. (1973) Overlapping-gate buried-channel charge-coupled devices; Electronics Letters; Vol. 9; No. 17; 396-398; 10.1049/el:19730293
- Mohsen, Amr M. and McGill, T. C., et el. (1973) Charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 3; 191-207; 10.1109/JSSC.1973.1050376
- Mohsen, Amr M. and McGill, T. C., et el. (1973) The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 2; 125-138; 10.1109/JSSC.1973.1050361
- Mohsen, A. M. and McGill, T. C., et el. (1973) Push clocks: a new approach to charge-coupled devices clocking; Applied Physics Letters; Vol. 22; No. 4; 172-175; 10.1063/1.1654600
- McGill, T. C. (1972) Evaluation of the Third Moment of the Imaginary Part of the Dielectric Constant; Physical Review B; Vol. 6; No. 6; 2493-2495; 10.1103/PhysRevB.6.2493
- McGill, T. C. and Klima, J. (1972) Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors; Physical Review B; Vol. 5; No. 4; 1517-1528; 10.1103/PhysRevB.5.1517
- Kurtin, S. L. and McGill, T. C., et el. (1971) Direct interelectrode tunneling in GaSe; Physical Review B; Vol. 3; No. 10; 3368-3379; 10.1103/PhysRevB.3.3368
- McGill, T. C. and Klima, J. (1970) Critical analysis of the 'generalized coherent wave approximation'; Journal of Physics C: Solid State Physics; Vol. 3; No. 11; 2240-2244; 10.1088/0022-3719/3/11/008
- Kurtin, Stephen and McGill, T. C., et el. (1970) Tunneling Currents and the E-k Relation; Physical Review Letters; Vol. 25; No. 11; 756-759; 10.1103/PhysRevLett.25.756
- McGill, T. C. and Klima, J. (1970) Energy gaps in amorphous covalent semiconductors; Journal of Physics C: Solid State Physics; Vol. 3; No. 9; L163-L164; 10.1088/0022-3719/3/9/020
- McGill, T. C. and Kurtin, S., et el. (1970) Contact-limited currents in metal-insulator-metal structures; Journal of Applied Physics; Vol. 41; No. 9; 3831-3839; 10.1063/1.1659514
- McGill, T. C. and Kurtin, S. L., et el. (1970) Optical Reflection Studies of Damage in Ion Implanted Silicon; Journal of Applied Physics; Vol. 41; No. 1; 246-251; 10.1103/PhysRevB.11.5208
- Pearson, J. E. and McGill, T. C., et el. (1969) Diffraction of Gaussian Laser Beams by a Semi-Infinite Plane; Journal of the Optical Society of America; Vol. 59; No. 11; 1440-1445
- Kurtin, S. and McGill, T. C., et el. (1969) Fundamental transition in the electronic nature of solids; Physical Review Letters; Vol. 22; No. 26; 1433-1436; 10.1103/PhysRevLett.22.1433
- Kurtin, Stephen and Shifrin, Gordon A., et el. (1969) Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region; Applied Physics Letters; Vol. 14; No. 7; 223-225; 10.1063/1.1652788
- Parker, G. H. and McGill, T. C., et el. (1968) Electric field dependence of GaAs Schottky barriers; Solid-State Electronics; Vol. 11; No. 2; 201-204; 10.1016/0038-1101(68)90079-8
- Thornber, K. K. and McGill, Thomas C., et el. (1967) The Tunneling Time of an Electron; Journal of Applied Physics; Vol. 38; No. 5; 2384-2384; 10.1063/1.1709888