McGill, Thomas C.

Article from CaltechAUTHORS

• Cartoixà, X. and Ting, D. Z.-Y., et el. (2003) Description of bulk inversion asymmetry in the effective-bond-orbital model; Physical Review B; Vol. 68; No. 23; Art. No. 235319; 10.1103/PhysRevB.68.235319
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• Cheng, X.-C. and McGill, T. C. (1998) Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2291-2295; 10.1116/1.590235
• Bandić, Z. Z. and Piquette, E. C., et el. (1998) Solid phase recrystallization of ZnS thin films on sapphire; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; 10.1063/1.121483
• Ting, D. Z.-Y. and McGill, T. C. (1998) Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes; VLSI Design; Vol. 6; No. 1-4; 363-366; 10.1155/1998/12165
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• Pettersson, P. O. and Ahn, C. C., et el. (1996) Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 3030-3034; 10.1116/1.589059
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• Chow, D. H. and McCaldin, J. O., et el. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; 10.1063/1.98949
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• McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; 10.1116/1.584221
• Miles, R. H. and Chow, P. P., et el. (1988) Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1382-1385; 10.1116/1.584226
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• Miles, R. H. and McGill, T. C., et el. (1987) Structure of CdTe/ZnTe superlattices; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1263-1267; 10.1116/1.583816
• Rajakarunanayake, Y. and McGill, T. C. (1987) Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1288-1294; 10.1116/1.583822
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• Collins, R. T. and Lambe, J., et el. (1984) Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 597-598; 10.1116/1.582845
• Zur, A. and McGill, T. C. (1984) Band offsets, defects, and dipole layers in semiconductor heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 440-444; 10.1116/1.582891
• Collins, R. T. and Lambe, J., et el. (1984) Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers; Journal of Vacuum Science and Technology B; Vol. 2; No. 2; 201-202; 10.1116/1.582779
• Smith, D. L. and McGill, T. C. (1984) HgTe-CdTe Superlattices; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; 10.1051/jphyscol:1984575
• Zur, A. and McGill, T. C. (1984) Lattice match: An application to heteroepitaxy; Journal of Applied Physics; Vol. 55; No. 2; 378-386; 10.1063/1.333084
• Prabhakar, A. and McGill, T. C., et el. (1983) Platinum diffusion into silicon from PtSi; Applied Physics Letters; Vol. 43; No. 12; 1118-1120; 10.1063/1.94247
• Zur, A. and McGill, T. C., et el. (1983) Fermi-level position at a semiconductor-metal interface; Physical Review B; Vol. 28; No. 4; 2060-2067; 10.1103/PhysRevB.28.2060
• Mailhiot, C. and Smith, D. L., et el. (1983) Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; 10.1116/1.582568
• Collins, R. T. and McGill, T. C. (1983) Electronic properties of deep levels in p‐type CdTe; Journal of Vacuum Science and Technology A; Vol. 1; No. 3; 1633-1636; 10.1116/1.572245
• Zur, A. and McGill, T. C., et el. (1983) Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; 10.1116/1.582607
• McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; 10.1116/1.582498
• Mailhiot, C. and McGill, T. C., et el. (1983) Tunneling and propagating transport in GaAs-Ga_(1-x)Al_xAs-GaAs(100) double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 439-444; 10.1116/1.582622
• McGill, T. C. and Collins, D. A. (1983) Prospects for the future of narrow bandgap materials; Semiconductor Science and Technology; Vol. 8; No. 1S; S1-S5; 10.1088/0268-1242/8/1S/001
• Redondo, Antonio and Goddard, William A., III, et el. (1982) Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 328-329; 10.1116/1.571772
• Redondo, Antonio and Goddard, William A., III, et el. (1982) Mott insulator model of the Si(111)–(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 649-654; 10.1116/1.571806
• Mailhiot, C. and Chang, Yia-Chung, et el. (1982) Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 519-523; 10.1116/1.571751
• Hunter, A. T. and McGill, T. C. (1982) Luminescence studies of HgCdTe alloys; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 205-207; 10.1116/1.571716
• Collins, R. T. and Kuech, T. F., et el. (1982) A DLTS study of deep levels in n-type CdTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 191-194; 10.1116/1.571710
• Swarts, C. A. and Daw, M. S., et el. (1982) Bulk vacancies in CdxHg1–xTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 198-200; 10.1116/1.571712
• Hunter, A. T. and McGill, T. C. (1982) Selective excitation luminescence in bulk-grown GaAs; Applied Physics Letters; Vol. 40; No. 2; 169-171; 10.1063/1.93031
• Redondo, A. and Goddard, W. A., III, et el. (1981) Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters; Physical Review B; Vol. 24; No. 10; 6135-6138; 10.1103/PhysRevB.24.6135
• Redondo, A. and Goddard, W. A., III, et el. (1981) Oxidation of silicon surfaces; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 498-501; 10.1116/1.571046
• Daw, M. S. and Smith, D. L., et el. (1981) Surface vacancies in II-VI and III-V zinc blende semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; 10.1116/1.571048
• Daw, M. S. and Smith, D. L., et el. (1981) Surface core excitons in III-V semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; 10.1116/1.571069
• Swarts, C. A. and Goddard, W. A., III, et el. (1981) Geometry of the abrupt (110) Ge/GaAs interface; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 551-555; 10.1116/1.571124
• Swarts, C. A. and Goddard, W. A., III, et el. (1981) Core to surface excitations on GaAs(110); Journal of Vacuum Science and Technology; Vol. 19; No. 3; 360-366; 10.1116/1.571064
• Swarts, C. A. and Barton, J. J., et el. (1980) Chemisorption of Al and Ga on the GaAs (110) surface; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 869-873; 10.1116/1.570607
• Swarts, C. A. and Goddard, W. A., III, et el. (1980) Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 982-986; 10.1116/1.570652
• Schulman, J. N. and McGill, T. C. (1980) Localization of superlattice electronic states and complex bulk band structures; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1118-1119; 10.1116/1.570625
• McCaldin, J. O. and McGill­, T. C. (1980) The metal-semiconductor interface; Annual Review of Materials Science; Vol. 10; 65-83; 10.1146/annurev.ms.10.080180.000433
• Hunter, A. T. and Smith, D. L., et el. (1980) Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe; Applied Physics Letters; Vol. 37; No. 2; 200-203; 10.1063/1.91824
• Barton, John J. and Swarts, Coenraad A., et el. (1980) Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory; Journal of Vacuum Science and Technology; Vol. 17; No. 1; 164-168; 10.1116/1.570462
• Hunter, A. T. and Lyon, S. A., et el. (1979) Transient decay of satellite lines of bound excitons in Si: P; Physical Review B; Vol. 20; No. 6; 2431-2437; 10.1103/PhysRevB.20.2431
• Schulman, J. N. and McGill, T. C. (1979) Ideal CdTe/HgTe superlattices; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1513-1516; 10.1116/1.570237
• Barton, John J. and Goddard, William A., III, et el. (1979) Reconstruction and oxidation of the GaAs(110) surface; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1178-1185; 10.1116/1.570186
• Goddard, William A., III and McGill, T. C. (1979) Study of surfaces and interfaces using quantum chemistry techniques; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1308-1317; 10.1116/1.570148
• Schulman, J. N. and McGill, T. C. (1978) Tight‐binding calculation for the AlAs–GaAs (100) interface; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1456-1458; 10.1116/1.569807
• Goddard, William A., III and Barton, John J., et el. (1978) Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1274-1286; 10.1116/1.569753
• Chen, M. and Lyon, S. A., et el. (1977) Transients of the photoluminescence from EHD in doped and undoped Ge; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; 10.1007/bf02725801
• Best, J. S. and McCaldin, J. O., et el. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices; Applied Physics Letters; Vol. 29; No. 7; 433-434; 10.1063/1.89109
• Mead, C. A. and McGill, T. C. (1976) Schottky barrier heights on p-type diamond and silicon carbide (6h); Physics Letters A; Vol. 58; No. 4; 249-251; 10.1016/0375-9601(76)90088-8
• Scranton, R. A. and Mooney, J. B., et el. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride; Applied Physics Letters; Vol. 29; No. 1; 47-48; 10.1063/1.88868
• McCaldin, J. O. and McGill, T. C., et el. (1976) Schottky barriers on compound semiconductors: The role of the anion; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; 10.1116/1.568993
• McCaldin, J. O. and McGill, T. C., et el. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity; Physical Review Letters; Vol. 36; No. 1; 56-58; 10.1103/PhysRevLett.36.56
• Hammond, R. B. and Smith, D. L., et el. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state; Physical Review Letters; Vol. 35; No. 22; 1535-1538; 10.1103/PhysRevLett.35.1535
• Smith, D. L. and Pan, D. S., et el. (1975) Impact ionization of excitons in Ge and Si; Physical Review B; Vol. 12; No. 10; 4360-4366; 10.1103/PhysRevB.12.4360
• McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors; Physical Review B; Vol. 11; No. 12; 5208-5210; 10.1103/PhysRevB.11.5208
• Lee, T. F. and McGill, T. C. (1975) Variation of impurity–to–band activation energies with impurity density; Journal of Applied Physics; Vol. 46; No. 1; 373-380; 10.1063/1.321346
• Lee, T. F. and Pashley, R. D., et el. (1975) Investigation of tellurium-implanted silicon; Journal of Applied Physics; Vol. 46; No. 1; 381-388; 10.1063/1.321347
• McGill, T. C. (1974) Phenomenology of metal-semiconductor electrical barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 935-942; 10.1116/1.1318709
• Daimon, Yoshiaki and Mohsen, Amr M., et el. (1974) Final stage of the charge-transfer process in charge-coupled devices; IEEE Transactions on Electron Devices; Vol. 21; No. 4; 266-272; 10.1109/T-ED.1974.17908
• Silver, R. N. and McGill, T. C. (1974) Spin-excitation spectra and resistance minima in amorphous ferromagnetic alloys; Physical Review B; Vol. 9; No. 1; 272-280; 10.1103/PhysRevB.9.272
• McGill, T. C. and Mead, C. A. (1974) Electrical interface barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 122-127; 10.1116/1.1318540
• Lee, T. F. and McGill, T. C. (1973) Semiempirical calculation of deep levels: divacancy in Si; Journal of Physics C: Solid State Physics; Vol. 6; No. 23; 3438-3450; 10.1088/0022-3719/6/23/017
• Marrello, V. and Lee, T. F., et el. (1973) Condensation of Injected Electrons and Holes in Germanium; Physical Review Letters; Vol. 31; No. 9; 593-594; 10.1103/PhysRevLett.31.593
• Mohsen, A. M. and Bower, R., et el. (1973) Overlapping-gate buried-channel charge-coupled devices; Electronics Letters; Vol. 9; No. 17; 396-398; 10.1049/el:19730293
• Mohsen, Amr M. and McGill, T. C., et el. (1973) Charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 3; 191-207; 10.1109/JSSC.1973.1050376
• Mohsen, Amr M. and McGill, T. C., et el. (1973) The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 2; 125-138; 10.1109/JSSC.1973.1050361
• Mohsen, A. M. and McGill, T. C., et el. (1973) Push clocks: a new approach to charge-coupled devices clocking; Applied Physics Letters; Vol. 22; No. 4; 172-175; 10.1063/1.1654600
• McGill, T. C. (1972) Evaluation of the Third Moment of the Imaginary Part of the Dielectric Constant; Physical Review B; Vol. 6; No. 6; 2493-2495; 10.1103/PhysRevB.6.2493
• McGill, T. C. and Klima, J. (1972) Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors; Physical Review B; Vol. 5; No. 4; 1517-1528; 10.1103/PhysRevB.5.1517
• Kurtin, S. L. and McGill, T. C., et el. (1971) Direct interelectrode tunneling in GaSe; Physical Review B; Vol. 3; No. 10; 3368-3379; 10.1103/PhysRevB.3.3368
• McGill, T. C. and Klima, J. (1970) Critical analysis of the 'generalized coherent wave approximation'; Journal of Physics C: Solid State Physics; Vol. 3; No. 11; 2240-2244; 10.1088/0022-3719/3/11/008
• Kurtin, Stephen and McGill, T. C., et el. (1970) Tunneling Currents and the E-k Relation; Physical Review Letters; Vol. 25; No. 11; 756-759; 10.1103/PhysRevLett.25.756
• McGill, T. C. and Klima, J. (1970) Energy gaps in amorphous covalent semiconductors; Journal of Physics C: Solid State Physics; Vol. 3; No. 9; L163-L164; 10.1088/0022-3719/3/9/020
• McGill, T. C. and Kurtin, S., et el. (1970) Contact-limited currents in metal-insulator-metal structures; Journal of Applied Physics; Vol. 41; No. 9; 3831-3839; 10.1063/1.1659514
• McGill, T. C. and Kurtin, S. L., et el. (1970) Optical Reflection Studies of Damage in Ion Implanted Silicon; Journal of Applied Physics; Vol. 41; No. 1; 246-251; 10.1103/PhysRevB.11.5208
• Pearson, J. E. and McGill, T. C., et el. (1969) Diffraction of Gaussian Laser Beams by a Semi-Infinite Plane; Journal of the Optical Society of America; Vol. 59; No. 11; 1440-1445
• Kurtin, S. and McGill, T. C., et el. (1969) Fundamental transition in the electronic nature of solids; Physical Review Letters; Vol. 22; No. 26; 1433-1436; 10.1103/PhysRevLett.22.1433
• Kurtin, Stephen and Shifrin, Gordon A., et el. (1969) Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region; Applied Physics Letters; Vol. 14; No. 7; 223-225; 10.1063/1.1652788
• Parker, G. H. and McGill, T. C., et el. (1968) Electric field dependence of GaAs Schottky barriers; Solid-State Electronics; Vol. 11; No. 2; 201-204; 10.1016/0038-1101(68)90079-8
• Thornber, K. K. and McGill, Thomas C., et el. (1967) The Tunneling Time of an Electron; Journal of Applied Physics; Vol. 38; No. 5; 2384-2384; 10.1063/1.1709888