McGill, Thomas C.

Combined from CaltechTHESIS advisor

• Ichiriu, Stephan Robert (2005) Investigation of Spin Injection in Semiconductors: Theory and Experiment; 10.7907/Z9CS-0V34
• Strittmatter, Robert Paul (2004) Development of Micro-Electromechanical Systems in GaN; 10.7907/5CZG-DG26
• Oldham, Neal Curtis (2004) Investigation of Spintronic Materials Systems: Deposition and Characterization; 10.7907/ZAV0-8X28
• Preisler, Edward James (2003) Investigation of Novel Semiconductor Heterostructure Systems: I. Cerium Oxide/Silicon Heterostructures. II. 6.1 Å Semiconductor-Based Avalanche Photodiodes; 10.7907/59X1-WQ68
• Cartoixà Soler, Xavier (2003) Theoretical Methods for Spintronics in Semiconductors with Applications; 10.7907/0YTD-VC11
• Hill, Cory James (2001) Investigation of spin injection and optical imaging with scanning probe microscopy techniques; 10.7907/bvj9-jv02
• Beach, Robert Andrew (2001) Column III Nitride Growth, Characterization and Devices; 10.7907/C61D-BC22
• Bandić, Zvonimir Z. (2000) Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization; 10.7907/cnyb-cq58
• Bridger, Paul Martin (1999) Development of Apertureless Microscopy and Force Microscopy of GaN and CeO₂; 10.7907/8ybw-sh03
• Alonzo, Alicia Cristina (1999) Effects of geometry on the wet thermal oxidation of aluminum arsenide; 10.7907/Q286-WB43
• Cheng, Xiao-chang (1999) Investigation of New Devices and Characterization Techniques in the III-V Semiconductor System; 10.7907/4pmy-xb16
• Piquette, Eric C. (1999) Molecular beam heteroepitaxial growth and characterization of wide band gap semiconductor films and devices; 10.7907/by67-nr24
• Springfield, Christopher D. (1998) Development of an object-oriented infrared imaging system simulator and its application to multi-spectral infrared imaging; 10.7907/jcn5-z151
• Pettersson, Per-Olov (1996) Silicon heterojunctions; 10.7907/pvjr-8w50
• Marquardt, Ronald R. (1995) Quantum magnetotransport studies of semiconductor heterostructure devices; 10.7907/P7Z1-T478
• Levy, Harold (1995) Application and integration of quantum-effect devices for cellular VLSI; 10.7907/qtd4-5r46
• Miles, Robert J. (1995) Microprobe investigations of semiconductor structures; 10.7907/7bk3-4486
• Swenberg, Johanes F. N. (1995) Development of wide-bandgap II-VI semiconductor light-emitting device technology based on the graded injector design; 10.7907/p2ey-5557
• Wang, Michael Wei-Ching (1995) Graded injector, wide bandgap light emitters and XPS studies of the InAs/GaSb heterointerface; 10.7907/653J-FX31
• Liu, Yixin (1995) Quantum tunneling, field induced injecting contact, and excitons; 10.7907/JKFM-1G06
• Collins, Douglas (1994) Growth and characterization of novel, III-V semiconductor heterostructures; 10.7907/s534-m274
• Kirby, Shaun K. (1994) Three-dimensional supercell simulation of novel semiconductor nanostructures; 10.7907/cxwh-w083
• Phillips, Mark C. (1993) Graded Injection: A New Approach to Wide-Bandgap Light Emitters; 10.7907/nsaj-9v42
• Croke, Edward Timothy, III (1991) Growth and Characterization of Si-Based Electronic Materials for Novel Device Applications; 10.7907/yc74-1m24
• Rajakarunanayake, Yasantha Nirmal (1991) Optical properties of Si-Ge superlattices and wide band gap II-VI superlattices; 10.7907/b43v-6930
• Jackson, Michael Kevin (1991) Optical studies of semiconductor heterostructures: measurements of tunneling times, and studies of strained superlattices; 10.7907/2c3x-qn71
• Yu, Edward Tsu-Wei (1991) Physics and applications of semiconductor heterostructures : I. Measurement of band offsets in semiconductor heterojunctions. II. Theoretical and experimental studies of tunneling in semiconductor heterostructure devices; 10.7907/AXNV-8575
• Johnson, Matthew Bruce (1989) Ultrafast Time-Resolved Photoluminescence Studies of GaAs; 10.7907/9WE7-AP87
• Miles, Richard Henry (1989) Structural and Optical Properties of Strained-Layer Superlattices; 10.7907/042y-d234
• Chow, David Hsingkuo (1989) Growth, Characterization, and Simulation of Novel Semiconductor Tunnel Structures; 10.7907/96gc-kc14
• Boudville, Wesley J. (1988) Fluctuations Due to Object Discreteness; 10.7907/drt3-m876
• Wu, Yu-shu George (1988) Electronic Properties of II-VI Superlattices and III-V Tunnel Structures; 10.7907/7sag-9t91
• Woodward, Ted Kirk (1988) Experimental Studies of Heterostructure Devices: Resonant Tunneling Transistors and GaAs/AlAs/GaAs Capacitors; 10.7907/cwz8-my71
• Bonnefoi, Alice Renée (1987) Electronic Properties and Device Applications of GaAs/AlₓGa₁₋ₓAs Quantum Barrier and Quantum Well Heterostructures; 10.7907/c4q6-2176
• Hauenstein, Robert Joseph (1987) Investigations of Single-Crystal Silicide/Silicon Structures; 10.7907/8hdm-m814
• Hetzler, Steven Robert (1986) Infrared Optical Studies of HgTe-CdTe Superlattices and GaAs; 10.7907/5ptm-z449
• Collins, Reuben Theodore (1985) Electronic Properties of Heterostructures and Defects in Compound Semiconductors; 10.7907/pg8h-k549
• Prabhakar, Arati (1985) Investigations of Deep Level Defects in Semiconductor Material Systems; 10.7907/BNQT-B222
• Mailhiot, Christian (1984) Theoretical Investigations of Electron States in Small-Scale Semiconductor Structures; 10.7907/0470-nf89
• Zur, Amikam (1984) Theoretical Investigations of Solid Interfaces: 1. The Position of the Fermi Level at a Metal-Semiconductor Interface. 2. Geometric Lattice Match and Its Application to Heteroepitaxy. 3. Ab-Initio Calculation of the Elastic Properties of Silicon, Using Small Clusters; 10.7907/w8vp-2g07
• Feenstra, Randall Meindert (1982) Electronic and Vibrational States of Point Defects in Semiconductors; 10.7907/p5ph-6811
• Hunter, Andrew Thompson (1982) Low Temperature Photoluminescence Studies of Shallow Electronic States in Semiconductors; 10.7907/m34b-s854
• Williams, Arthur Ray (1981) Atomic Structure of Transition Metal Based Metallic Glasses; 10.7907/sb90-n460
• Mitchard, Gordon Stuart (1981) Low Temperature Photoluminescence Properties of Silicon and Silicon-Germanium Alloys; 10.7907/T3SB-MQ10
• Daw, Murray Scott (1981) Theory of Vacancies and Core Excitons Near Semiconductor Surfaces; 10.7907/4vtp-g014
• Tenhover, Michael Alan (1981) Mössbauer Effect Studies in Yttrium Based Metallic Glasses; 10.7907/5a6h-a632
• Elliott, Kenneth Robert (1980) Optical Determination of the Properties of Excitons Bound to Impurities in Semiconductors; 10.7907/z105-h928
• Lyon, Stephen Aplin (1979) Optical Properties of Excited Silicon and Germanium at Low Temperatures; 10.7907/8gcb-7j35
• Schulman, Joel Nathan (1979) Electronic Structure of AlAs/GaAs and CdTe/HgTe Superlattices and Interfaces; 10.7907/arnr-m290
• Osbourn, Gordon Cecil (1979) Theoretical Studies of Bound Exciton Decay and of Transport across Semiconductor Interfaces; 10.7907/78qm-hz56
• Pan, Dee-Son (1978) Some Theoretical Problems in Low Temperature Optical Properties of Semiconductors; 10.7907/b3v2-pt24
• Chen, Martin Yu-Wen (1977) Luminescence Properties of Electron-Hale-Droplets in Pure and Doped Germanium; 10.7907/9WCK-2W46
• Redondo-Muiño, Antonio (1977) Theoretical Studies of Silicon Surfaces Using Finite Clusters; 10.7907/8M08-WC34
• Hammond, Robert Bruce (1976) Some Luminescence Properties of Excited Silicon at Low Temperatures; 10.7907/yfrb-vg83
• Lee, Tsu-wei Frank (1975) Deep Levels and High Concentrations of Impurities in Silicon; 10.7907/j2rb-3s97
• Daimon-Hagihara, Yoshiaki (1975) Change Transfer in Charge Coupled Devices; 10.7907/vx9y-gb03
• Marrello, Vincent (1975) Part I. Solid-Phase Growth of Germanium Structures. Part II. Condensation of Injected Electrons and Holes in Germanium; 10.7907/56z0-0h91