@article{https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230,
    title = "Electrical resistivity change in amorphous Ta\_42Si\_13N\_45 films by stress relaxation",
    journal = "Applied Physics A: Materials Science and Processing",
    year = "2015",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230",
    id = "record",
    issn = "0947-8396",
    doi = "10.1007/s00339-014-8931-0",
    volume = "118"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253,
    title = "Irradiation of amorphous Ta\_(42)Si\_(13)N\_(45) film with a femtosecond laser pulse",
    journal = "Applied Physics A: Materials Science and Processing",
    year = "2011",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253",
    id = "record",
    issn = "0947-8396",
    doi = "10.1007/s00339-010-6149-3",
    volume = "104"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299,
    title = "Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)",
    journal = "Microelectronic Engineering",
    year = "2001",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299",
    id = "record",
    issn = "0167-9317",
    doi = "10.1016/S0167-9317(00)00468-8",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775,
    title = "Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)",
    journal = "Vacuum",
    year = "2000",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775",
    id = "record",
    issn = "0042-207X",
    doi = "10.1016/S0042-207X(00)00338-9",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99,
    title = "Thermal reaction of Pt film with 110 GaN epilayer",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.581924",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:GASjes99,
    title = "Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation",
    journal = "Journal of the Electrochemical Society",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GASjes99",
    id = "record",
    issn = "0013-4651",
    doi = "10.1149/1.1391802",
    volume = "146"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98,
    title = "Films of Ni–7 at\% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3",
    journal = "Journal of Physics D: Applied Physics",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98",
    id = "record",
    issn = "0022-3727",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98,
    title = "Surface-micromachined Ta–Si–N beams for use in micromechanics",
    journal = "Journal of Micromechanics and Microengineering",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98",
    id = "record",
    issn = "0960-1317",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822,
    title = "Surface-micromachined Ta-Si-N beams for use in micromechanics",
    journal = "Journal of Micromechanics and Microengineering",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822",
    id = "record",
    issn = "0960-1317",
    doi = "10.1088/0960-1317/8/2/011",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97,
    title = "SiGeC alloy layer formation by high-dose C +  implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)",
    journal = "Journal of Applied Physics",
    year = "1997",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.364027",
    volume = "81"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96,
    title = "Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy",
    journal = "Journal of Materials Research",
    year = "1996",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96",
    id = "record",
    issn = "0884-2914",
    volume = "11"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:REIjap96,
    title = "Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations",
    journal = "Journal of Applied Physics",
    year = "1996",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:REIjap96",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.360909",
    volume = "79"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404,
    title = "Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1995",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.588331",
    volume = "13"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971,
    title = "Reactive ion etching of Ta–Si–N diffusion barriers in CF\_(4)+O\_(2)",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1994",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.587763",
    volume = "12"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93,
    title = "Damage and strain in epitaxial GexSi1–x films irradiated with Si",
    journal = "Journal of Applied Physics",
    year = "1993",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.355219",
    volume = "74"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c,
    title = "Instability of a GexSi1−xO2 film on a GexSi1−x layer",
    journal = "Journal of Applied Physics",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.352211",
    volume = "72"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WORprb92,
    title = "D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7",
    journal = "Physical Review B",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WORprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.46.8589",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b,
    title = "Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100)",
    journal = "Journal of Applied Physics",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350802",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b,
    title = "Wet oxidation of GeSi at (700)C",
    journal = "Journal of Applied Physics",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350847",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a,
    title = "Importance of sample preheating in oxidation of GexSi1−x",
    journal = "Journal of Applied Physics",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350922",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a,
    title = "Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures",
    journal = "Journal of Applied Physics",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a",
    id = "record",
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    doi = "10.1063/1.351325",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c,
    title = "Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349251",
    volume = "70"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91,
    title = "Epitaxial growth of GaAs by solid-phase transport",
    journal = "Applied Physics Letters",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.106267",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:POKjap91,
    title = "Thermal oxidation of amorphous ternary Ta36Si14N50 thin films",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:POKjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349345",
    volume = "70"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91,
    title = "Tantalum-based diffusion barriers in Si/Cu VLSI metallizations",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349594",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b,
    title = "Defects production and annealing in self-implanted Si",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b",
    id = "record",
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    doi = "10.1063/1.349668",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a,
    title = "Elastic and thermal properties of mesotaxial CoSi2 layers on Si",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a",
    id = "record",
    issn = "0021-8979",
    volume = "69"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91,
    title = "Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves",
    journal = "Journal of Applied Physics",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.348733",
    volume = "69"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247,
    title = "Arsenic loss during palladium reaction with bulk and thin film gallium arsenide",
    journal = "Thin Solid Films",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247",
    id = "record",
    issn = "0040-6090",
    doi = "10.1016/0040-6090(91)90176-X",
    volume = "196"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606,
    title = "Reflection high-energy electron diffraction patterns of CrSi\_2 films on (111) silicon",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1991",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585791",
    volume = "9"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631,
    title = "Thermal oxidation of reactively sputtered amorphous W\_(80)N\_(20) films",
    journal = "Journal of Applied Physics",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.346863",
    volume = "68"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90,
    title = "Radiation damage in ReSi2 by a MeV 4He beam",
    journal = "Applied Physics Letters",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.104134",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540,
    title = "Encapsulation of GaAs and GaAs-Pd in furnace annealing",
    journal = "Vacuum",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540",
    id = "record",
    issn = "0042-207X",
    doi = "10.1016/0042-207X(90)93852-A",
    volume = "41"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90,
    title = "Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100)",
    journal = "Physical Review B",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.41.8603",
    volume = "41"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386,
    title = "Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1990",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.576620",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIapl89,
    title = "Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth",
    journal = "Applied Physics Letters",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIapl89",
    id = "record",
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    doi = "10.1063/1.102327",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEjap89,
    title = "NiAl3 formation in Al/Ni thin-film bilayers with and without contamination",
    journal = "Journal of Applied Physics",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MAEjap89",
    id = "record",
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    doi = "10.1063/1.342756",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572,
    title = "Thermal reaction of Al/Ti bilayers with contaminated interface",
    journal = "Journal of Applied Physics",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572",
    id = "record",
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    doi = "10.1063/1.342780",
    volume = "65"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89,
    title = "Ion mixing of metal/Al bilayers near 77 K",
    journal = "Applied Physics Letters",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89",
    id = "record",
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    doi = "10.1063/1.100937",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965,
    title = "Sequential nature of damage annealing and activation in implanted GaAs",
    journal = "Applied Physics Letters",
    year = "1989",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965",
    id = "record",
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    doi = "10.1063/1.100948",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88,
    title = "Indium oxide diffusion barriers for Al/Si metallizations",
    journal = "Applied Physics Letters",
    year = "1988",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88",
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    doi = "10.1063/1.100541",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEapl88,
    title = "Simultaneous planar growth of amorphous and crystalline Ni silicides",
    journal = "Applied Physics Letters",
    year = "1988",
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    doi = "10.1063/1.100494",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SOFjap88,
    title = "WxN1–x alloys as diffusion barriers between Al and Si",
    journal = "Journal of Applied Physics",
    year = "1988",
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    id = "record",
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    volume = "64"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap88,
    title = "TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities",
    journal = "Journal of Applied Physics",
    year = "1988",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEjap88,
    title = "Ion mixing and thermochemical properties of tracers in Ag",
    journal = "Journal of Applied Physics",
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    id = "record",
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    doi = "10.1063/1.341018",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KIMprb88,
    title = "Low-temperature ion-beam mixing in metals",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.37.38",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88,
    title = "Silicon resistor to measure temperature during rapid thermal annealing",
    journal = "Review of Scientific Instruments",
    year = "1988",
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    id = "record",
    issn = "0034-6748",
    doi = "10.1063/1.1140004",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SOFjvstb87,
    title = "Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.583631",
    volume = "5"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87,
    title = "Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface",
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    id = "record",
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    doi = "10.1063/1.339563",
    volume = "62"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIMjap87,
    title = "Kinetics and moving species during Co2Si formation by rapid thermal annealing",
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    id = "record",
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    doi = "10.1063/1.338324",
    volume = "61"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WORapl87,
    title = "Effect of thermodynamics on ion mixing",
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    issn = "0003-6951",
    doi = "10.1063/1.98253",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEprl87,
    title = "From cascade to spike — a fractal-geometry approach",
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    year = "1987",
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    id = "record",
    issn = "0031-9007",
    doi = "10.1103/PhysRevLett.58.2083",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87,
    title = "Study of CoSi2/Si strained layers grown by molecular beam epitaxy",
    journal = "Journal of Vacuum Science and Technology B",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLapl87,
    title = "Reactively sputtered RuO2 diffusion barriers",
    journal = "Applied Physics Letters",
    year = "1987",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KOLapl87",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.98012",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401,
    title = "Chemical effects in ion mixing of a ternary system (metal-SiO\_2)",
    journal = "Applied Physics Letters",
    year = "1987",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401",
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    doi = "10.1063/1.98138",
    volume = "50"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170816-144413444,
    title = "Distinguishing anisotropic from isotropic transport in ion mixing of metal/oxide bilayers",
    journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
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    issn = "0168-583X",
    doi = "10.1016/S0168-583X(87)80141-6",
    volume = "19-20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625,
    title = "Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1986",
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    id = "record",
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    doi = "10.1116/1.573631",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86,
    title = "Reaction of thin metal films with crystalline and amorphous Al2O3",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980,
    title = "Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980",
    id = "record",
    issn = "0734-2101",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEjap86,
    title = "Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing",
    journal = "Journal of Applied Physics",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEjap86",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.337131",
    volume = "60"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta86,
    title = "Bias-induced stress transitions in sputtered TiN films",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta86",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.573776",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709,
    title = "Effect of dose rate on ion beam mixing in Nb-Si",
    journal = "Applied Physics Letters",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.96854",
    volume = "48"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958,
    title = "Effects of ion irradiation on conductivity of CrSi\_2 thin films",
    journal = "Journal of Applied Physics",
    year = "1986",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.336931",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120628-154831998,
    title = "Formation and electrical properties of Hf Si\_2 grown thermally from evaporated Hf and Si films",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120628-154831998",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.572909",
    volume = "3"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta85,
    title = "Sputtered W–N diffusion barriers",
    journal = "Journal of Vacuum Science and Technology A",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta85",
    id = "record",
    issn = "0734-2101",
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    volume = "3"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEapl85a,
    title = "Dominant moving species in the formation of amorphous NiZr by solid-state reaction",
    journal = "Applied Physics Letters",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEapl85a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.95988",
    volume = "47"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:AFFjap85,
    title = "Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves?",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:AFFjap85",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.335809",
    volume = "58"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ROSapl85,
    title = "Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers",
    journal = "Applied Physics Letters",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ROSapl85",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.95557",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HAMprb85,
    title = "Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices",
    journal = "Physical Review B",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HAMprb85",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.31.2343",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SPEjap85,
    title = "Interfacial strain in AlxGa1–xAs layers on GaAs",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SPEjap85",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334490",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HAMjap85,
    title = "Analyses of metalorganic chemical-vapor-deposition-grown AlxGa1−xAs/GaAs strained superlattice structures by backscattering spectrometry and x-ray rocking curves",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HAMjap85",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334496",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PANprb85,
    title = "Structural study of GaSb/AlSb strained-layer superlattice",
    journal = "Physical Review B",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PANprb85",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.31.1270",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZURjap85,
    title = "Transition-metal silicides lattice-matched to silicon",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ZURjap85",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334743",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85b,
    title = "An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334793",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KIMapl85,
    title = "Low-temperature ion beam mixing of Pt and Si markers in Ge",
    journal = "Applied Physics Letters",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KIMapl85",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.95719",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120628-081537763,
    title = "A structure marker study for Pd\_2Si formation: Pd moves in epitaxial Pd\_2Si",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120628-081537763",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334792",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a,
    title = "Palladium silicide formation under the influence of nitrogen and oxygen impurities",
    journal = "Journal of Applied Physics",
    year = "1985",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334794",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHUjap84,
    title = "Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ZHUjap84",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.333804",
    volume = "56"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170726-143803541,
    title = "An improved forward I-V method for nonideal Schottky diodes with high series resistance",
    journal = "IEEE Transactions on Electron Devices",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170726-143803541",
    id = "record",
    issn = "0018-9383",
    doi = "10.1109/T-ED.1984.21739",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIEjvstb84,
    title = "Impurity effects in transition metal silicides",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIEjvstb84",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.582872",
    volume = "2"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap84,
    title = "Substrate orientation dependence of enhanced epitaxial regrowth of silicon",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HOKjap84",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334050",
    volume = "56"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ROSjap84,
    title = "Magnetic properties of amorphous thin films produced by ion mixing",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ROSjap84",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.334096",
    volume = "56"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SPEapl84,
    title = "Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice",
    journal = "Applied Physics Letters",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SPEapl84",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.95190",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SUNjap84,
    title = "Influence of F and Cl on the recrystallization of ion-implanted amorphous Si",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SUNjap84",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.333957",
    volume = "56"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEapl84,
    title = "Influence of chemical driving forces in ion mixing of metallic bilayers",
    journal = "Applied Physics Letters",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEapl84",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.95163",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929,
    title = "Mathematical model for a radioactive marker in silicide formation",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.333037",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409,
    title = "Chromium silicide formation by ion mixing",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.332938",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KUNjap84,
    title = "Electrical characteristics of amorphous molybdenum-nickel contacts to silicon",
    journal = "Journal of Applied Physics",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KUNjap84",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.332905",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ROSprb84,
    title = "Amorphization of Hf-Ni films by solid-state reaction",
    journal = "Physical Review B",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ROSprb84",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.29.5498",
    volume = "29"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170726-174538830,
    title = "Utilization of NiSi\_2 as an interconnect material for VLSI",
    journal = "IEEE Electron Device Letters",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170726-174538830",
    id = "record",
    issn = "0741-3106",
    doi = "10.1109/EDL.1984.25841",
    volume = "5"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl84a,
    title = "Self-confined metallic interconnects for very large scale integration",
    journal = "Applied Physics Letters",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BARapl84a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.94692",
    volume = "44"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl84c,
    title = "Ion mixing of markers in SiO2 and Si",
    journal = "Applied Physics Letters",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BARapl84c",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.94546",
    volume = "44"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PRAapl83,
    title = "Platinum diffusion into silicon from PtSi",
    journal = "Applied Physics Letters",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PRAapl83",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.94247",
    volume = "43"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83,
    title = "Kinetics of TiSi2 formation by thin Ti films on Si",
    journal = "Journal of Applied Physics",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.332781",
    volume = "54"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARjap83,
    title = "Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>",
    journal = "Journal of Applied Physics",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BARjap83",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.332721",
    volume = "54"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120717-090516601,
    title = "Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi\_2 on silicon",
    journal = "Applied Physics Letters",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120717-090516601",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.94314",
    volume = "43"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:FINapl83,
    title = "Electrical characteristics of amorphous iron-tungsten contacts on silicon",
    journal = "Applied Physics Letters",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:FINapl83",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.93824",
    volume = "42"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83b,
    title = "Ion mixing to produce amorphous Mo-Ru superconducting films",
    journal = "Applied Physics Letters",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.94002",
    volume = "42"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83a,
    title = "Structural difference rule for amorphous alloy formation by ion mixing",
    journal = "Applied Physics Letters",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUapl83a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.93767",
    volume = "42"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120713-112400215,
    title = "Ion Mixing",
    journal = "Annual Review of Materials Science",
    year = "1983",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120713-112400215",
    id = "record",
    issn = "0084-6600",
    doi = "10.1146/annurev.ms.13.080183.002011",
    volume = "13"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SPEapl82,
    title = "X-ray rocking curve study of Si-implanted GaAs, Si, and Ge",
    journal = "Applied Physics Letters",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SPEapl82",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.93195",
    volume = "40"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SUNapl82,
    title = "Compensating impurity effect on epitaxial regrowth rate of amorphized Si",
    journal = "Applied Physics Letters",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SUNapl82",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.93034",
    volume = "40"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEjap82,
    title = "The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers",
    journal = "Journal of Applied Physics",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MAEjap82",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.330519",
    volume = "53"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437,
    title = "Improvement of thermally formed nickel silicide by ion irradiation",
    journal = "Journal of Vacuum Science and Technology",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.571353",
    volume = "20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl82a,
    title = "Thermal oxidation of nickel disilicide",
    journal = "Applied Physics Letters",
    year = "1982",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BARapl82a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.93033",
    volume = "40"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl81,
    title = "Electrical characteristics of Al contact to NiSi using thin W layer as a barrier",
    journal = "Applied Physics Letters",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BARapl81",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92571",
    volume = "39"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NICjvst81,
    title = "Diffusion barriers in layered contact structures",
    journal = "Journal of Vacuum Science and Technology",
    year = "1981",
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    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.571149",
    volume = "19"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81,
    title = "Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system",
    journal = "Journal of Vacuum Science and Technology",
    year = "1981",
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    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.571078",
    volume = "19"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GRIapl81,
    title = "Epitaxial regrowth of thin amorphous GaAs layers",
    journal = "Applied Physics Letters",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GRIapl81",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92520",
    volume = "39"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81,
    title = "Sequence of phase formation in planar metal-Si reaction couples",
    journal = "Applied Physics Letters",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92183",
    volume = "38"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148,
    title = "Ion implantation and low-temperature epitaxial regrowth of GaAs",
    journal = "Journal of Applied Physics",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120717-155107148",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.329213",
    volume = "52"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEjap81,
    title = "Thermal stability of titanium nitride for shallow junction solar cell contacts",
    journal = "Journal of Applied Physics",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEjap81",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.329283",
    volume = "52"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GRIjap81,
    title = "Epitaxial growth of amorphous Ge films deposited on single-crystal Ge",
    journal = "Journal of Applied Physics",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GRIjap81",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.329763",
    volume = "52"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120719-133310810,
    title = "Alteration of Ni silicide formation by N implantation",
    journal = "Applied Physics Letters",
    year = "1981",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120719-133310810",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92259",
    volume = "38"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAapl80,
    title = "Reversible phase transformation in the Pd2Si-PdSi thin-film system",
    journal = "Applied Physics Letters",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAapl80",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92054",
    volume = "37"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:MASapl80,
    title = "Steady-state thermally annealed GaAs with room-temperature-implanted Si",
    journal = "Applied Physics Letters",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MASapl80",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.91637",
    volume = "36"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20170802-155903092,
    title = "Investigation of titanium-nitride layers for solar-cell contacts",
    journal = "IEEE Transactions on Electron Devices",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170802-155903092",
    id = "record",
    issn = "0018-9383",
    doi = "10.1109/T-ED.1980.19949",
    volume = "27"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:CAMjap80,
    title = "Laser pulse annealing of ion-implanted GaAs",
    journal = "Journal of Applied Physics",
    year = "1980",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CAMjap80",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.327369",
    volume = "51"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl79c,
    title = "Pulsed electron beam induced recrystallization and damage in GaAs",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl79c",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90987",
    volume = "35"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAapl79,
    title = "Depth dependence of atomic mixing by ion beams",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAapl79",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90951",
    volume = "35"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287,
    title = "Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices",
    journal = "Electronics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170807-155031287",
    id = "record",
    issn = "0013-5194",
    doi = "10.1049/el:19790380",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl79,
    title = "Solar furnace annealing of amorphous Si layers",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl79",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.91109",
    volume = "35"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:ROUjap79,
    title = "Laser annealing of silicon on sapphire",
    journal = "Journal of Applied Physics",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ROUjap79",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.326616",
    volume = "50"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl79b,
    title = "Pulsed-laser annealing of implanted layers in GaAs",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl79b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90887",
    volume = "34"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420,
    title = "Diagnostic test for ion implantation dosimetry",
    journal = "Journal of Vacuum Science and Technology",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.570106",
    volume = "16"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl79a,
    title = "Silicon implantation in GaAs",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl79a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90715",
    volume = "34"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120727-101306063,
    title = "Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers",
    journal = "Applied Physics Letters",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120727-101306063",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90568",
    volume = "34"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:FINjap79,
    title = "Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-Ni",
    journal = "Journal of Applied Physics",
    year = "1979",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:FINjap79",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.325659",
    volume = "50"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b,
    title = "Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation",
    journal = "Applied Physics Letters",
    year = "1978",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90310",
    volume = "33"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a,
    title = "Epitaxial growth of deposited amorphous layer by laser annealing",
    journal = "Applied Physics Letters",
    year = "1978",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90280",
    volume = "33"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025,
    title = "Use of ion beams in space",
    journal = "Journal of Vacuum Science and Technology",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569366",
    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PREjap77,
    title = "Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique",
    journal = "Journal of Applied Physics",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PREjap77",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.324098",
    volume = "48"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HARjap77,
    title = "Solid-phase crystallization of Si films in contact with Al layers",
    journal = "Journal of Applied Physics",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HARjap77",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.324100",
    volume = "48"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120802-111429967,
    title = "Investigation of the Au-Ge-Ni and Au-Ge-Pt system used
 for alloyed contacts to GaAs",
    journal = "Journal of Vacuum Science and Technology",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120802-111429967",
    id = "record",
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    doi = "10.1116/1.569392",
    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PREapl77,
    title = "Radioactive silicon as a marker in thin-film silicide formation",
    journal = "Applied Physics Letters",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PREapl77",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.89230",
    volume = "30"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179,
    title = "Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system",
    journal = "Journal of Applied Physics",
    year = "1977",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.323708",
    volume = "48"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76,
    title = "Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer",
    journal = "Journal of Applied Physics",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76",
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    doi = "10.1063/1.322591",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PREapl76,
    title = "Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system",
    journal = "Applied Physics Letters",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PREapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.89156",
    volume = "29"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76,
    title = "Interaction of metal layers with polycrystalline Si",
    journal = "Journal of Applied Physics",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.322826",
    volume = "47"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76,
    title = "Ti and V layers retard interaction between Al films and polycrystalline Si",
    journal = "Applied Physics Letters",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88734",
    volume = "28"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76,
    title = "Antimony doping of Si layers grown by solid-phase epitaxy",
    journal = "Applied Physics Letters",
    year = "1976",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88670",
    volume = "28"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75,
    title = "Interaction of Al layers with polycrystalline Si",
    journal = "Journal of Applied Physics",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.321530",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75,
    title = "Magnetoelectric properties of magnetite thin films",
    journal = "Journal of Physics C: Solid State Physics",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75",
    id = "record",
    issn = "0022-3719",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MALapl75,
    title = "Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors",
    journal = "Applied Physics Letters",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MALapl75",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88158",
    volume = "26"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HARprb75,
    title = "Energy straggling of 4He ions below 2.0 MeV in Al, Ni, and Au",
    journal = "Physical Review B",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HARprb75",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.11.1013",
    volume = "11"
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    title = "Studies on the Al2O3–Ti–Mo–Au metallization system",
    journal = "Journal of Vacuum Science and Technology",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HARjvst75a",
    id = "record",
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    doi = "10.1116/1.568580",
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    title = "Energy straggling of 4He ions below 2.0 MeV in Al, Ni, Pt, and Au",
    journal = "Journal of Vacuum Science and Technology",
    year = "1975",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HARjvst75b",
    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611,
    title = "Backscattering spectrometry",
    journal = "Journal of Vacuum Science and Technology",
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    id = "record",
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    doi = "10.1116/1.568788",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:FENprb74,
    title = "Stopping-cross-section additivity for 1-2-MeV 4He+ in solid oxides",
    journal = "Physical Review B",
    year = "1974",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:FENprb74",
    id = "record",
    issn = "0556-2805",
    doi = "10.1103/PhysRevB.10.3781",
    volume = "10"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74,
    title = "Identification of the dominant diffusing species in silicide formation",
    journal = "Applied Physics Letters",
    year = "1974",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1655546",
    volume = "25"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213,
    title = "Kinetics of silicide formation by thin films of V on Si and SiO\_2 substrates",
    journal = "Journal of Applied Physics",
    year = "1974",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.1663776",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20151111-095217502,
    title = "Microanalysis of Materials by Backscattering Spectrometry",
    journal = "Science",
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    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.177.4052.841",
    volume = "177"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170810-154316923,
    title = "Magnetite thin films",
    journal = "IEEE Transactions on Magnetics",
    year = "1972",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170810-154316923",
    id = "record",
    issn = "0018-9464",
    doi = "10.1109/TMAG.1972.1067513",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72,
    title = "Formation of Injecting and Blocking Contacts on High-Resistivity Germanium",
    journal = "Applied Physics Letters",
    year = "1972",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1654169",
    volume = "20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338,
    title = "Permittivity of β-Ga\_2O\_3 at low frequencies",
    journal = "Solid-State Electronics",
    year = "1971",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338",
    id = "record",
    issn = "0038-1101",
    doi = "10.1016/0038-1101(71)90176-6",
    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAJapl71,
    title = "Preferential Oxidation of Fe in Permalloy Films",
    journal = "Applied Physics Letters",
    year = "1971",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAJapl71",
    id = "record",
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    doi = "10.1063/1.1653842",
    volume = "19"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71,
    title = "Low-temperature migration of silicon in thin layers of gold platinum",
    journal = "Applied Physics Letters",
    year = "1971",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1653615",
    volume = "18"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120730-121345445,
    title = "A Flexible Simple Thermostat for Small Objects and the Range of 100 to 400 K",
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    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120730-121345445",
    id = "record",
    issn = "0034-6748",
    doi = "10.1063/1.1684513",
    volume = "41"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LEEpr69,
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    id = "record",
    issn = "0031-899X",
    doi = "10.1103/PhysRev.184.806",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:RODjap69,
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    journal = "Journal of Applied Physics",
    year = "1969",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:RODjap69",
    id = "record",
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    doi = "10.1063/1.1657427",
    volume = "40"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120827-112350834,
    title = "Noise and Equivalent Circuit of Double Injection",
    journal = "Journal of Applied Physics",
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    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120827-112350834",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170814-171148315,
    title = "Measurement of the drift velocity of holes in silicon at high-field strengths",
    journal = "IEEE Transactions on Electron Devices",
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    volume = "14"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NICapl66,
    title = "Noise suppression in a double-injection silicon diode",
    journal = "Applied Physics Letters",
    year = "1966",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:NICjap66,
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    doi = "10.1063/1.1708004",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120827-110918315,
    title = "Differential Step Response of Unipolar Space-Charge-Limited Current in Solids",
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    year = "1966",
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    title = "Pure Space-Charge-Limited Electron Current in Silicon",
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