[
    {
        "id": "authors:v1dd6-9mp39",
        "collection": "authors",
        "collection_id": "v1dd6-9mp39",
        "cite_using_url": "https://authors.library.caltech.edu/records/v1dd6-9mp39",
        "type": "article",
        "title": "Anisotropic multiband magnetotransport in LaAg\u2082 Ge\u2082 thin films",
        "author": [
            {
                "family_name": "Ohno",
                "given_name": "Mizuki",
                "orcid": "0000-0002-8460-5060",
                "clpid": "Ohno-Mizuki"
            },
            {
                "family_name": "Dorrian",
                "given_name": "Reiley",
                "orcid": "0009-0000-9599-6127",
                "clpid": "Dorrian-Reiley"
            },
            {
                "family_name": "Show",
                "given_name": "Veronica",
                "orcid": "0000-0002-5700-0429",
                "clpid": "Show-Veronica"
            },
            {
                "family_name": "Falson",
                "given_name": "Joseph",
                "orcid": "0000-0003-3183-9864",
                "clpid": "Falson-Joseph"
            }
        ],
        "abstract": "<p>ThCr2<span class=\"diff-html-added\">\u2082</span>Si<span class=\"diff-html-added\">\u2082</span>-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here we report the molecular-beam epitaxy growth of LaAg<span class=\"diff-html-added\">\u2082</span>\u2062Ge<span class=\"diff-html-added\">\u2082</span> thin films on MgO(001) and their magnetotransport properties. Hall measurements are well described by an effective two-carrier model with a high-mobility minority electron coexisting with a low-mobility majority hole. The observed positive magnetoresistance of 22.5% at 9 T exceeds the prediction of the isotropic two-band Drude model by more than an order of magnitude, indicating an anisotropic multisheet Fermi-surface origin. Consistently, angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ThCr2<span class=\"diff-html-added\">\u2082</span>Si<span class=\"diff-html-added\">\u2082</span> family.</p>",
        "doi": "10.1103/81qk-48jc",
        "issn": "2475-9953",
        "publisher": "American Physical Society",
        "publication": "Physical Review Materials",
        "publication_date": "2026-06-24",
        "series_number": "6",
        "volume": "10",
        "issue": "6",
        "pages": "063403"
    }
]