@article{https://resolver.caltech.edu/CaltechAUTHORS:20200103-162108300,
    title = "Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures",
    journal = "Journal of Computational Electronics",
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    issn = "1569-8025",
    doi = "10.1023/a:1020748702245",
    volume = "1"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89a,
    title = "k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field",
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    year = "1989",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.39.6060",
    volume = "39"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WUGjvsta87,
    title = "Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.574224",
    volume = "5"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAIjvstb84,
    title = "New approach to the k·p theory of semiconductor superlattices",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
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    doi = "10.1116/1.582826",
    volume = "2"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20200318-154418910,
    title = "HgTe-CdTe Superlattices",
    journal = "Journal de Physique Colloques",
    year = "1984",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20200318-154418910",
    id = "record",
    issn = "0449-1947",
    doi = "10.1051/jphyscol:1984575",
    volume = "45"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZURprb83,
    title = "Fermi-level position at a semiconductor-metal interface",
    journal = "Physical Review B",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.28.2060",
    volume = "28"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120712-124524007,
    title = "Transport characteristics of L-point and Г-point electrons through GaAs-Ga\_(1-x)Ai\_xAs-GaAs(111} double heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1983",
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    doi = "10.1116/1.582568",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb83,
    title = "Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83,
    title = "Summary Abstract: HgTe–CdTe superlattices",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1983",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505,
    title = "Surface vacancies in II-VI and III-V zinc blende
 semiconductors",
    journal = "Journal of Vacuum Science and Technology",
    year = "1981",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766,
    title = "Surface core excitons in III-V semiconductors",
    journal = "Journal of Vacuum Science and Technology",
    year = "1981",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113,
    title = "Energy levels of semiconductor surface vacancies",
    journal = "Journal of Vacuum Science and Technology",
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    id = "record",
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    doi = "10.1116/1.570584",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20180702-153655592,
    title = "Near-band‐gap photoluminescence of Hg\_(1−x)Cd\_xTe",
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    url = "https://resolver.caltech.edu/CaltechAUTHORS:20180702-153655592",
    id = "record",
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    doi = "10.1063/1.91824",
    volume = "37"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20180702-101720986,
    title = "Transient decay of satellite lines of bound excitons in Si: P",
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    url = "https://resolver.caltech.edu/CaltechAUTHORS:20180702-101720986",
    id = "record",
    issn = "2469-9950",
    doi = "10.1103/PhysRevB.20.2431",
    volume = "20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120726-112918493,
    title = "Carrier transport coefficients across GaAs-GaAIAs (100) interfaces",
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    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120726-112918493",
    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20221004-680171300.29,
    title = "Transients of the photoluminescence from EHD in doped and undoped Ge",
    journal = "Il Nuovo Cimento B",
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    id = "record",
    issn = "1826-9877",
    doi = "10.1007/bf02725801",
    volume = "39"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HAMprl75,
    title = "Temperature dependence of silicon luminescence due to splitting of the indirect ground state",
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    id = "record",
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    doi = "10.1103/PhysRevLett.35.1535",
    volume = "35"
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    title = "Impact ionization of excitons in Ge and Si",
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    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.12.4360",
    volume = "12"
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