Smith, Darryl L.

Article from CaltechAUTHORS

• Ting, D. Z.-Y. and Cartoixà, X., et el. (2002) Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures; Journal of Computational Electronics; Vol. 1; No. 1-2; 147-151; 10.1023/a:1020748702245
• Wu, G. Y. and McGill, T. C., et el. (1989) k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field; Physical Review B; Vol. 39; No. 9; 6060-6070; 10.1103/PhysRevB.39.6060
• Wu, G. Y. and McGill, T. C., et el. (1987) Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field; Journal of Vacuum Science and Technology B; Vol. 5; No. 5; 3096-3101; 10.1116/1.574224
• Mailhiot, C. and McGill, T. C., et el. (1984) New approach to the k·p theory of semiconductor superlattices; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 371-375; 10.1116/1.582826
• Smith, D. L. and McGill, T. C. (1984) HgTe-CdTe Superlattices; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; 10.1051/jphyscol:1984575
• Zur, A. and McGill, T. C., et el. (1983) Fermi-level position at a semiconductor-metal interface; Physical Review B; Vol. 28; No. 4; 2060-2067; 10.1103/PhysRevB.28.2060
• Mailhiot, C. and Smith, D. L., et el. (1983) Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; 10.1116/1.582568
• Zur, A. and McGill, T. C., et el. (1983) Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; 10.1116/1.582607
• McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; 10.1116/1.582498
• Daw, M. S. and Smith, D. L., et el. (1981) Surface vacancies in II-VI and III-V zinc blende semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; 10.1116/1.571048
• Daw, M. S. and Smith, D. L., et el. (1981) Surface core excitons in III-V semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; 10.1116/1.571069
• Daw, M. S. and Smith, D. L. (1980) Energy levels of semiconductor surface vacancies; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1028-1031; 10.1116/1.570584
• Hunter, A. T. and Smith, D. L., et el. (1980) Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe; Applied Physics Letters; Vol. 37; No. 2; 200-203; 10.1063/1.91824
• Hunter, A. T. and Lyon, S. A., et el. (1979) Transient decay of satellite lines of bound excitons in Si: P; Physical Review B; Vol. 20; No. 6; 2431-2437; 10.1103/PhysRevB.20.2431
• Osbourn, G. C. and Smith, D. L. (1979) Carrier transport coefficients across GaAs-GaAIAs (100) interfaces; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1529-1532; 10.1116/1.570242
• Chen, M. and Lyon, S. A., et el. (1977) Transients of the photoluminescence from EHD in doped and undoped Ge; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; 10.1007/bf02725801
• Hammond, R. B. and Smith, D. L., et el. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state; Physical Review Letters; Vol. 35; No. 22; 1535-1538; 10.1103/PhysRevLett.35.1535
• Smith, D. L. and Pan, D. S., et el. (1975) Impact ionization of excitons in Ge and Si; Physical Review B; Vol. 12; No. 10; 4360-4366; 10.1103/PhysRevB.12.4360