@article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl98, title = "Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures", journal = "Applied Physics Letters", year = "1998", url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl98", id = "record", issn = "0003-6951", doi = "10.1063/1.121935", volume = "73" } @article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98, title = "Electronic properties of Si/Si1–x–yGexCy heterojunctions", journal = "Journal of Vacuum Science and Technology B", year = "1998", url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98", id = "record", issn = "1071-1023", doi = "10.1116/1.589847", volume = "16" } @article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97, title = "Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions", journal = "Journal of Vacuum Science and Technology B", year = "1997", url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97", id = "record", issn = "1071-1023", doi = "10.1116/1.589422", volume = "15" } @article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl97, title = "Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy", journal = "Applied Physics Letters", year = "1997", url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl97", id = "record", issn = "0003-6951", doi = "10.1063/1.119188", volume = "70" } @article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl94, title = "X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds", journal = "Applied Physics Letters", year = "1994", url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl94", id = "record", issn = "0003-6951", doi = "10.1063/1.111239", volume = "64" } @article{https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808, title = "n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design", journal = "Journal of Applied Physics", year = "1993", url = "https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808", id = "record", issn = "0021-8979", doi = "10.1063/1.352761", volume = "73" } @article{https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92, title = "Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system", journal = "Physical Review B", year = "1992", url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92", id = "record", issn = "0163-1829", doi = "10.1103/PhysRevB.46.13379", volume = "46" } @article{https://resolver.caltech.edu/CaltechAUTHORS:TINprb92, title = "Multiband treatment of quantum transport in interband tunnel devices", journal = "Physical Review B", year = "1992", url = "https://resolver.caltech.edu/CaltechAUTHORS:TINprb92", id = "record", issn = "0163-1829", doi = "10.1103/PhysRevB.45.3583", volume = "45" } @article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91, title = "Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy", journal = "Journal of Vacuum Science and Technology B", year = "1991", url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91", id = "record", issn = "1071-1023", doi = "10.1116/1.585726", volume = "9" } @article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91, title = "Band structure effects in interband tunnel devices", journal = "Journal of Vacuum Science and Technology B", year = "1991", url = "https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91", id = "record", issn = "1071-1023", doi = "10.1116/1.585711", volume = "9" } @article{https://resolver.caltech.edu/CaltechAUTHORS:COLapl90, title = "Experimental observation of negative differential resistance from an InAs/GaSb interface", journal = "Applied Physics Letters", year = "1990", url = "https://resolver.caltech.edu/CaltechAUTHORS:COLapl90", id = "record", issn = "0003-6951", doi = "10.1063/1.103591", volume = "57" } @article{https://resolver.caltech.edu/CaltechAUTHORS:SODjap90, title = "Two-band modeling of narrow band gap and interband tunneling devices", journal = "Journal of Applied Physics", year = "1990", url = "https://resolver.caltech.edu/CaltechAUTHORS:SODjap90", id = "record", issn = "0021-8979", doi = "10.1063/1.346688", volume = "68" } @article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90, title = "Modeling of novel heterojunction tunnel structures", journal = "Journal of Vacuum Science and Technology B", year = "1990", url = "https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90", id = "record", issn = "1071-1023", doi = "10.1116/1.584971", volume = "8" } @article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90, title = "Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)", journal = "Journal of Vacuum Science and Technology B", year = "1990", url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90", id = "record", issn = "1071-1023", doi = "10.1116/1.584941", volume = "8" } @article{https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89, title = "Hole tunneling times in GaAs/AlAs double-barrier structures", journal = "Applied Physics Letters", year = "1989", url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89", id = "record", issn = "0003-6951", doi = "10.1063/1.101793", volume = "55" } @article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89, title = "Commutativity of the GaAs/AlAs (100) band offset", journal = "Journal of Vacuum Science and Technology B", year = "1989", url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89", id = "record", issn = "1071-1023", doi = "10.1116/1.584758", volume = "7" }